Schottky barrier modulation of bottom contact SnO2 thin-film transistors via chloride-based combustion synthesis

Using the successive ionic layer adsorption and reaction (SILAR) method, we successfully deposited thin films (TFs) of both pure cadmium oxide (CdO) and strontium (Sr) CdO onto glass slides. Analysis of the films’ structure and morphology, conducted via field emission scanning electron microscopy and X-ray diffraction, revealed a polycrystalline cubic structure with porous nanoflake agglomerates. Further characterization involved ultraviolet–visible spectroscopy and photoluminescence spectrum measurements to explore the optical attributes of the CdO films. Notably, we observed significant impacts of Sr doping on both optical transmittance and photoluminescence emission intensity in the CdO nanostructures. Electrical measurements, carried out using four-probe Iviumstat analysis, demonstrated variations in resistivity with different levels of Sr doping. These findings highlight the potential for controlling specific physical features of CdO through Sr doping, making it a promising candidate for various device applications.

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Schottky barrier modulation of bottom contact SnO2 thin-film transistors via chloride-based combustion synthesis

Cited by 2 publications

References 39 publications

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

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