Novel, low‐voltage, high‐detectivity, solution‐processed, flexible near‐infrared (NIR) photodetectors for optoelectronic applications are realized and their optoelectronic properties are investigated for the first time. This is achieved by synthesizing Ag2Se nanoparticles (NPs) in aqueous solutions, and depositing highly crystalline Ag2Se thin films at 150 °C with redistributed Ag2Se NPs in aqueous inks. The high conductivity and low trap concentration of the 150 °C annealed Ag2Se films result from the Ag formed inside the films and the improved film quality, respectively. These factors are both critical for the realization of high‐performance flexible photodetectors. The fabricated device exhibits a high detectivity of 7.14 × 109 Jones (above 1 × 109) at room temperature, delivering low power consumption. This detectivity is superior to those of reported low band‐gap semiconductor systems, although the device has undergone 0.38% compressive and tensile strains. Moreover, the performance of the device is better than that of MoS2‐based phototransistors, black arsenic phosphorus field‐effect transistors, or commercial thermistor bolometers at room temperature (D* ≈ 108 Jones), and is exposed to mid‐infrared light.

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We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation.