Schottky barrier rectifier with high current density using vanadium as barrier metal

Abstract

This letter reports on an improved forward voltage drop (VF) and reverse leakage current (IR) in Schottky barrier rectifier using vanadium (V–SBR) as the barrier metal with a low barrier height (φB) and argon implantation. The VF for a V–SBR was as low as 0.25 V compared to 0.39 V for a molybdenum (Mo)–SBR at the same forward current density (JF) of 60 A/cm2. This study was able to achieve a good result for JF in SBR. Presently, the conventional Schottky rectifier with a low φB metal is used to achieve low VF, but at the expense of a high IR. To reduce this effect, crystalline Si was altered into amorphous Si using argon implantation on the n-epitaxial layer. Finally, a SBR with a high JF and low IR could be fabricated.

Effect of ion irradiation on current–voltage characteristics of Au/n-GaN Schottky diodes

“…It is extremely important to understand the ion irradiation effects on the electrical characteristics of Schottky behavior in the development of particle detectors and in the areas such as testing of radiation hardness for space applications. Several reports are available in literature on the study of irradiation effects of low energy ions, lasers and neutrons on Schottky diodes [1][2][3]. To the best of authors' knowledge there are no such reports available on the influence of swift heavy ion (SHI) irradiation on Schottky contacts relating to GaN films.…”

Influence of He-ion irradiation on the characteristics of Pd/n-Si0.90Ge0.10/Si Schottky contacts

“…The knowledge of the influence of radiation damage on the Schottky barrier diodes (SBDs) performance is a fundamental field of research, having technological relevance for many applications in the semiconductor electronic devices. The influence of ion implantation induced changes of Schottky barrier height (SBH) in silicon and GaAs has been reported [10,11]. However, improving the SiGe based device processing requires an understanding of the electrical properties of Metal/Si 1−x Ge x /Si SBDs subjected to ion implantation.…”

Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100)

“…Nickel-vanadium (NiV) materials have various applications in the semiconductor industry [46]. Although both nickel (Ni) and vanadium (V) Schottky contacts with n-type Si have been fabricated and characterized separately in [47] and [48], respectively, Gammon et al [35] have been the first to study the NiV/Si Schottky contact. Nevertheless, the study performed in [35] consists only of studying the temperature-related nonlinearity at the NiV/Si interface.…”