1989
DOI: 10.1088/0268-1242/4/1/011
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Schottky barriers to CdS and their importance in Schottky barrier theories

Abstract: A study of the transport properties of Schottky barriers to the vacuum-and air-cleaved surfaces of CdS have yielded a wide range of barrier heights which, contrary to popular belief, show no linear correlation with the metal work function. The characteristics have shown a strong dependence on the methods of preparation and subsequent treatment of the diodes. Further investigations using XPS have confirmed that the interfacial chemistry is significant in the Schottky barrier formation process. These results are… Show more

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Cited by 11 publications
(4 citation statements)
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“…The V bi can be estimated as the tangential intersection on V-axis in C -2 versus V plot. The effective density of state N c of CdS was calculated to be 2.42 ×10 18 cm -3 using equation (15), where, k is the Boltzmann's constant, m e * is the effective electron mass, T is the temperature, and h is the Plank constant. The Fermi level E F , charge carrier mobility µ⊥ and the barrier height Φ b were calculated using equation (16), (17) and (18) It should be noted that the calculated Φ b values using C-V measurements are affected by the effects of defects and interfacial resistive layers producing excess capacitance and inhomogeneity of the semiconductor layer in the diode [14].…”
Section: Current -Voltage Characteristics With Rectifying Contactsmentioning
confidence: 99%
“…The V bi can be estimated as the tangential intersection on V-axis in C -2 versus V plot. The effective density of state N c of CdS was calculated to be 2.42 ×10 18 cm -3 using equation (15), where, k is the Boltzmann's constant, m e * is the effective electron mass, T is the temperature, and h is the Plank constant. The Fermi level E F , charge carrier mobility µ⊥ and the barrier height Φ b were calculated using equation (16), (17) and (18) It should be noted that the calculated Φ b values using C-V measurements are affected by the effects of defects and interfacial resistive layers producing excess capacitance and inhomogeneity of the semiconductor layer in the diode [14].…”
Section: Current -Voltage Characteristics With Rectifying Contactsmentioning
confidence: 99%
“…5 demonstrates the values of the bulk concentration of mobile Cd which can be reached by the action of the electric field on the metal CdS interface for various metals. The values of contact barrier heights Ψ b (in kT/e units) were taken from [12]. Ψ b (in the terms used above) corresponds to Ψ 0 /2 in formula (10) and in fig.…”
Section: Resultsmentioning
confidence: 99%
“…4 for the case of external electric field) or contact barrier potential yb (Fig. 5 for the case of Schottky barrier potential formed by the deposition of metals Sn, Co, Ag, Sb, Au [12]). The potential values are presented in kT/e units.…”
Section: Discussionmentioning
confidence: 99%
“…The above assumption of VLA is very crude. Even for all-inorganic metal/CdS diodes VLA is not properly valid [20] due to the existence of interface states within the band gap which can arise for different reasons, such as (i) original semiconductor surface states independent of the metal deposited; (ii) metal-induced surface states; (iii) states appearing as a result of the chemical reaction between the semiconductor and the metal (for reactive metals). In any case, the origin of the interface barrier should be studied additionally in every specific case.…”
Section: Introductionmentioning
confidence: 99%