Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

Adegboyega, G. A.; Poggi, Antonella; Susi, E.; Castaldini, A.; Cavallini, A.

doi:10.1007/bf00618904

Cited by 8 publications

(12 citation statements)

References 16 publications

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“…In addition, our results indicate that wet chemical etching for 20s at room temperature might cause considerable surface boron passivation. Similar results have been reported by previous studies (Adegboyega et al, 1989;Seager et al, 1987), suggesting that hydrogen passivation affects CV measurements of p-type substrate. Taken together, this study suggests that an etching period of about 15s seems likely to be optimum for the production of good devices.…”

Section: Dlts Measurementssupporting

confidence: 91%

“…All the data presented above provide clear evidence that hydrogen induced a decrease in the FeB deep level. A significant proportion of the boron concentration is neutralized in the surface region after wet chemical etching (Adegboyega et al, 1989;Castaldini et al, 2002). We find an almost and for different times.…”

Section: Dlts Measurementsmentioning

confidence: 58%

“…Carrier depth profiles are necessary to investigate the incorporation of hydrogen in silicon samples. For example, previous studies have calculated boron depth profiles from the CV measurements after wet chemical etching, reporting a decrease on the surface of the sample as well as complete recovery of boron at 2.5µm depths as seen from figure 4.2 (Adegboyega et al, 1989;Castaldini et al, 2002). The boron passivation incorporated from the surface.…”

Section: 1 CV Measurementsmentioning

confidence: 94%

“…The longer the etching time, the more boron are passivated. It is generally believed that this decrease in boron is compensated by the formation of boron hydrogen pair and a rough estimate (Adegboyega et al, 1989;Castaldini et al, 2002).…”

Section: 1 CV Measurementsmentioning

confidence: 99%

“…Unfortunately, such a process is difficult to verify. Understanding the mechanism of hydrogen interaction with iron related centers and the possible wet chemical etching-induced donor-like states in surface layer (Adegboyega et al, 1989) needs further investigations.…”

Section: Dlts Measurementsmentioning

confidence: 99%

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Concentrations and Reactions of Iron in Crystalline Silicon after Aluminum Gettering

Barey¹,

Othman²

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Iron is the most common transition metal impurities in semiconductor industry and PV silicon. Thus, it seems unlikely to avoid contamination with iron that has been considered to have the highest concentration in silicon wafers (Jastrzebski, et al., 1995). Unfortunately, less than 1ppb of iron was found to degrade the performance of p-type silicon device through the massive reduction of the minority carrier diffusion length (Buonassisi et al., described. Results and discussion are included in chapter 4. This chapter is divided into four parts; the influence of wet chemical etching on the iron concentration in silicon as well as the correspondence between time of etching, different etchants and boron passivation profile are studied in the first part. The second part deals with the aluminum gettering of iron in silicon and the physical mechanisms relevant for such temperature-dependent segregation coefficient in order to increase the understanding of the abilities and limitations of aluminum gettering in silicon solar cell processing, while the third part treats various aspects of aluminum gettering induced vacancies and using several ways to monitor vacancy concentration such as platinum and gold diffusion. Based on these finding, the last part in this thesis investigates the interaction between iron and induced vacancies from aluminum gettering under light illumination. Particular attention is devoted to gettering of iron and the interplay with vacancy, as well as to the influence of light on the formation of iron vacancy complexes (FeD). Finally, the main ideas of the thesis are summarized along a short conclusion and outlook in chapter 5.

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Section: Dlts Measurementssupporting

confidence: 91%

Section: Dlts Measurementsmentioning

confidence: 58%

Section: 1 CV Measurementsmentioning

confidence: 94%

Section: 1 CV Measurementsmentioning

confidence: 99%

Section: Dlts Measurementsmentioning

confidence: 99%

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