Schottky Contacts on Silicon

Werner, Jürgen; Rau, Uwe

doi:10.1007/978-3-642-79031-7_3

Cited by 17 publications

(19 citation statements)

References 178 publications

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“…·K ¹2 for p-type Si, 16) ) bo is the zero bias effective barrier height and n is the ideality factor which is a measure of conformity of the diode to pure thermionic emission. The ideality factor is obtained from the slope of straight line portion of the forward bias ln IV characteristics from eq.…”

Section: ¹2mentioning

confidence: 99%

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Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

et al. 2013

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We have investigated the temperature-dependent currentvoltage (IV) characteristics of Ti Schottky structure on the Si-on-insulator (SOI) in the temperature range of 175375 K by steps of 25 K. As decreasing temperature, the barrier height and ideality factor of Ti/SOI Schottky contact were found to be decreased and increased, respectively, indicating a considerable deviation from the ideal thermionic emission model in its current conduction mechanism. From the linear relationship between the barrier heights and ideality factors, the homogeneous barrier height was calculated to be 0.76 eV. The mean barrier height of 0.87 eV and the modified Richardson constant value of 30.63 A·cm ¹2 ·K ¹2 were obtained using modified Richardson plot. On the basis of a thermionic emission mechanism with a Gaussian distribution of the barrier heights, the temperature-dependent IV behavior of Ti/SOI Schottky contact was explained in terms of barrier height inhomogeneities at the interface between Ti and SOI.

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Section: ¹2mentioning

confidence: 99%

“…16) The deviation in the Richardson plot may be due to the spatially inhomogeneous barrier heights and potential fluctuations at the metalsemiconductor interface with low and high barrier areas. That is, the current through Ti/SOI Schottky contact flows preferentially through the lower barriers in the potential distribution.…”

Section: ·Kmentioning

confidence: 99%

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

et al. 2013

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“…The I – V characteristics of the device show the rectifying behavior with a potential formed at the interface. Therefore, it is assumed that the forward‐bias current of the device is due to a thermionic emission current, and it can be expressed as follows:24 where is the saturation current density, Φ b,0 is the effective barrier height at zero bias determined from the extrapolation of I 0 in the semilog forward‐bias ln I – V characteristics, A * is the effective Richardson constant and is equal to 32 A/cm 2 K 2 for p ‐type silicon,25, 26 and A is the diode area. Therefore, a Φ b,0 value of about 0.662 eV for the device was calculated from eq 2.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, a Φ b,0 value of about 0.662 eV for the device was calculated from eq 2. n is an ideality factor and is a measure of the conformity of the diode to pure thermionic emissions; it is determined from the slope of the straight‐line region of the semilog forward‐bias ln I – V characteristics through the following relation: The high values of n can be attributed to effects of the bias voltage drop across the interfacial layer, which separates the semiconductor from the metal, and, therefore, to effects of the bias voltage dependence of the barrier height 24–30. Furthermore, an n value of about 1.734 for the device was calculated from eq 3.…”

Section: Resultsmentioning

confidence: 99%

Conductance and capacitance–frequency characteristics of polypyrrole/p‐type silicon structures

Çakar

Bı̇ber

Sağlam

et al. 2003

J Polym Sci B Polym Phys

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We formed a polypyrrole/p-type silicon device by an anodization process. An aluminum electrode was used as an ohmic contact. From the current-voltage characteristics of the device, barrier height and ideality factor values of 0.662 eV and 1.734, respectively, were obtained from a forward-bias current-voltage plot. Low capacitancefrequency and conductance-frequency measurements from 0.00 to 0.30 V with steps of 0.02 V were made. At each frequency, the measured capacitance decreased with increasing frequency because of a continuous distribution of the interface states in the frequency range of 5.0 Hz to 2.0 MHz.

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“…Schottky diodes are used for detector and mixer applications in SIMMWIC receiver modules [53]. The Schottky diode consists of a n-doped layer (10 cm ) grown on a highly n -doped buried layer.…”

Section: E Schottky Diodesmentioning

confidence: 99%

Si and SiGe millimeter-wave integrated circuits

Russer

1998

IEEE Trans. Microwave Theory Techn.

118

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Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon-and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon-and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.Index Terms-Millimeter-wave IC, silicon-based RF circuits.

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Schottky Contacts on Silicon

Cited by 17 publications

References 178 publications

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

Conductance and capacitance–frequency characteristics of polypyrrole/p‐type silicon structures

Si and SiGe millimeter-wave integrated circuits

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