Scintillation mechanisms of inorganic materials: From crystal characteristics to scintillation properties

Bizarri, Grégory

doi:10.1016/j.jcrysgro.2009.12.063

Cited by 37 publications

(22 citation statements)

References 10 publications

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“…Because the Ce(1) and Ce(2) atoms at the Lu(1) and Lu(2) sites where the Lu atoms have been replaced by Ce atoms, respectively, are considered to have Oh symmetry with the crystal structure 11 , the electronic structure of the Ce 3+ ions splits into 2 E 2g and 2 T 2g in accordance with the crystal field splitting mechanism 12 . The Ce 4 f orbitals also split into the 2 F 7/2 and 2 F 5/2 states in accordance with the spin-orbit splitting mechanism 13 . The luminescence of the Ce atoms is caused by a dipolar transition from the lowest Ce 5d orbital to the Ce 4 f orbitals 14 and thus peaks A and B of the luminescence spectrum shown in Fig.…”

Section: Discussionsupporting

confidence: 55%

Demonstration of stimulated emission depletion phenomenon in luminescence of solid-state scintillator excited by soft X-rays

Ejima

Wakayama

Shinozaki

et al. 2020

Sci Rep

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Although imaging techniques using soft X-rays (SXs) are being developed as the available photon flux increases because of the continuing development of synchrotron light sources, it will be necessary to downsize the pixel size of the SX camera to produce finer SX images. Application of the stimulated emission depletion (STED) method to a scintillator plate followed by use of this plate as a sensor is one promising method to reduce the pixel size of SX cameras. A STED phenomenon occurred in the luminescence of a Ce-doped Lu2SiO5 crystal (Ce:LSO) excited using ultraviolet (UV) light when the scintillator was irradiated with azimuthally polarized laser light in the photon energy range from 1.97 eV (630 nm) to 2.58 eV (480 nm). When the excitation light source changed to synchrotron radiation (SR) light with photon energy of 800 eV, the same STED phenomenon occurred. The spot size of the luminescence was reduced by the STED phenomenon and this spot size decreased as the STED laser’s photon energy increased. The energy dependence of the Ce:LSO luminescence levels can be used to explain the change in the spot size at the luminescence point.

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Section: Discussionsupporting

confidence: 55%

Demonstration of stimulated emission depletion phenomenon in luminescence of solid-state scintillator excited by soft X-rays

Ejima

Wakayama

Shinozaki

et al. 2020

Sci Rep

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“…in the series of Eu-containing iodides [7,8]. Europium is also used as an activator in the photostimulated storage phosphors BaFBr and CsBr used for viewing in the x-ray range [9,10].…”

mentioning

confidence: 99%

Structure and luminescence of CsI:Eu columnar films

et al. 2012

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Europium doped columnar films of CsI are produced by vacuum condensation. Eu 2+ ions in the CsI:Eu films lead to the formation of a narrow (0.18 eV), intense luminescence band with a maximum at 456 nm, which is excited by x-rays, as well as by photons of various energies. The spectral and kinetic characteristics of the emission depend on the amount of activator and on the conditions under which the film is prepared and stored. The nature of the luminescence centers is determined by structural formations that contain divalent europium ions.

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“…Not only does the STE itself emit light by radiative recombination, but the diffusion of the STH and STE can also lead to the transfer of their energy to other luminescence centers. [25][26][27][28][29] The STE can also undergo NRR through Frenkel-pair defect formation and diffusion. [30][31][32] one in Fig.…”

Section: Results: Nonradiative Recombination Paths In Undoped Csimentioning

confidence: 99%

Suppression of nonradiative recombination in ionic insulators by defects: Role of fast electron trapping in Tl-doped CsI

et al. 2013

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In semiconductors, defects often assist nonradiative relaxation. However, Tl doping can significantly suppress the nonradiative relaxation in alkali halides to increase scintillation efficiency. Without the Tl, it is known that the creation of Frenkel pairs at self-trapped excitons, assisted by excited electron and hole relaxations, is the reason for the nonradiative relaxation. Here we show by first-principles calculation that Tl doping introduces Tl p states inside the band gap to trap the excited electrons. The trapping is highly effective to within several picoseconds, as revealed by time-dependent density functional theory calculations. It alters the nonradiative relaxation process to result in a noticeable increase in the relaxation barrier from 0.3 to 0.63 eV, which reduces the nonradiative relaxation by roughly a factor of 10 5 at room temperature.

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Scintillation mechanisms of inorganic materials: From crystal characteristics to scintillation properties

Cited by 37 publications

References 10 publications

Demonstration of stimulated emission depletion phenomenon in luminescence of solid-state scintillator excited by soft X-rays

Demonstration of stimulated emission depletion phenomenon in luminescence of solid-state scintillator excited by soft X-rays

Structure and luminescence of CsI:Eu columnar films

Suppression of nonradiative recombination in ionic insulators by defects: Role of fast electron trapping in Tl-doped CsI

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