InGaAs/InP DHBT small‐signal model up to 325 GHz with two intrinsic base resistances

Abstract

In this paper, a novel small-signal equivalent-circuit model of terahertz InGaAs/InP double-heterojunction bipolar transistor (DHBT) is presented.Two intrinsic base resistances are introduced to represent the nonuniform extrinsic impedance of base-emitter and base-collector junctions separately.This treatment makes the high-frequency model more close to the triplemesa InP DHBT structure. Systematical parasitic parameter extraction method and intrinsic element initialization of a 0.5 μm * 5μm InGaAs/InP DHBT are presented. As a high-frequency device model, inter-electrode parasitic capacitances are calculated by three-dimensional electromagnetic simulation.The proposed model results in a good agreement with measured multibiased S-parameters up to 325 GHz.

An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors

“…Up to now, the method has been applied in the small-signal model building for kinds of transistors such as complementary metal-oxidesemiconductor field-effect transistors, [11,12] GaAs p-type high electron mobility transistors (HEMTs), [13] GaN HEMTs, [14] and InP HBTs. [15][16][17][18] Furthermore, the EM simulation approach can also be used in the noise model building for microwave transistors. In Ref.…”

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

“…Zhang et al presented a review on the compact modeling of InP HBTs for THz integrated circuits. Useful improvements made for HBTs are reported on the analysis of intrinsic base resistances by Chen et al, on large‐signal models by Hu et al, on the determination of cutoff and maximum oscillation frequencies by Zhang and Gao, and on the thermal resistance calculation by Wang et al Due to a high breakthrough voltage and saturation velocity, GaN HEMTs is very promising for millimeter‐wave solid‐state power amplifiers. Chen et al reported an improved quasi‐physics zone division large‐signal model to account for electro‐thermal effects, which is valid for the ambient temperature range of 245 to 390 K. Physical parameters' effects, reliable parameter extraction, and dynamic thermal impedance extraction for the equivalent circuit models of GaN HEMTs are discussed by Mi et al, Chen et al, and Wang et al, respectively.…”