Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection

Abstract

As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted considerable research interest in THz detection due to its unique physical properties. However, to achieve practical applications, the low‐cost, large‐scale, controllable synthesis and efficient patterning of 2D materials are key requirements, which remain a challenge for PtTe2 and its photodetectors (PDs). Herein, a facile approach is developed to obtain wafer‐scale (2‐inches) patterned PtTe2 arrays using one‐step tellurium‐vapor transformation method and micro‐Nano technology. PtTe2 PD arrays are fabricated with the as‐grown PtTe2 arrays evenly distributed on a 2‐inch wafer, exhibiting high conductivity (~2.7 × 105 S m−1) and good electrical consistency. Driven by the Dirac fermions, PtTe2 PDs achieve a broadband (0.02–0.3 THz) response with a fast response speed (~4.7 μs), a high sensitivity (~47 pW Hz−1/2) and high‐resolution transmission THz‐imaging capability, which displays the potential of large‐area THz array imaging. These results are one step towards the practical applications of integrated PD arrays based on 2D materials.

Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration

“…The distinguished detection capabilities are also proved by largearea THz transmission imaging using the PtTe 2 deviceintegrated detector array. 114 Type-II Dirac semimetals, extending beyond the scope of PtTe 2 , have been recognized for their adeptness in the rapid detection of terahertz frequencies under standard room conditions. This remarkable detection efficiency stems from the dynamic generation of nonequilibrium electrons, a process instigated by the interaction with engineered surface plasmon polaritons (SPPs) facilitated by a logarithmically patterned antenna within a metal-MTe 2 -metal configuration on a subwavelength scale.…”

“…Individual PtTe 2 detector with bow-tie antennae and 500 nm channels (iii). (f) Photocurrent of the PtTe 2 detector exposed to frequencies ranging from 0.02 to 0.30 THz at 0.1 V bias voltage 114. Copyright 2023 UESTC and John Wiley & Sons Australia, Ltd.…”

In situ construction of PtSe2/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging

“…12 (ii) The gapless electronic structure enables the detection of light wavelength in an ultra-broadband range. 13,14 (iii) The presence of Van Hove singularities in the electronic density of states promotes light-matter interactions, improving optical absorption and more efficient electron-hole pairs generation. 15 With these extraordinary properties, the widespread pursuit of 2D topological semimetals for high-performance broadband optoelectronic applications has been widely probed among the research community.…”

“…Recently, the emerging class of two‐dimensional (2D) topological semimetals has demonstrated significantly advantageous features for broad IR photodetection 10,11 : (i) The out‐of‐plane van der Waals bonding of 2D layered semimetals allows materials deposition without the strict lattice matching requirements 12 . (ii) The gapless electronic structure enables the detection of light wavelength in an ultra‐broadband range 13,14 . (iii) The presence of Van Hove singularities in the electronic density of states promotes light–matter interactions, improving optical absorption and more efficient electron–hole pairs generation 15 .…”

Nonsaturating Linear Magnetoresistance Manifesting Two-Dimensional Transport in Wet-Chemical Patternable Bi2O2Te Thin Films

“…Most recently, representative two-dimensional (2D) non-van der Waals bismuth oxychalcogenides (Bi 2 O 2 Se, Bi 2 O 2 Te, and Bi 2 O 2 S) have experienced great popularity due to their unique crystal structures and physical properties like ultrahigh electron mobility, outstanding photoelectric performance, and intrinsic ferroelectricity. − Chemical vapor deposition (CVD), with advantages of scalable and controllable preparation, have been utilized to produce a high-quality Bi 2 O 2 Te crystal down to the 2D limits, and high electron mobility, intrinsic ferroelectricity, and native oxides have been revealed. , To further extend its theoretical exploration and practical applications, the low-cost, controllable synthesis and efficient patterning of Bi 2 O 2 Te continuous films are key requirements. − Besides, novel quantum transport behaviors are expected to be observed in this system.…”