Screen printed logic gates employing milled p-silicon as an active material

Abstract

This work reports on the fabrication and characterization of all screen printed logic gates. The logic gates presented in this work were printed on plain paper (80 gsm) and employed milled p-silicon as the active layer. The active material used presented a varistor-like electrical behavior in an extended range of temperatures from 340-10 K. Current driven switches were produced and used as the building blocks for the logic gates. The fundamental OR and AND boolean logic gates were demonstrated at room temperature. Their various input and output voltage levels are presented. It was also shown that the active materials and switches presented a better electrical performance at cryogenics temperature. Thus, these logic gates have the potential to be applied for use in a cryogenics environment. The advantages and limitations of the printed logic gates are discussed by comparing them to conventional logic gates.

Switching alternating current (AC) using a fully screen‐printed current‐driven transistor

“…3 a and b show the current–current and current–voltage transfer characteristics in DC mode of operation for a typical device. Except for a higher absolute current, these transfer characteristics are similar to those previously reported [7, 24]. For the transfer characteristics of Fig.…”

“…The printed active layer is illustrated (shaded green in Fig. 1); the active silicon was chosen over their general switching capability as they were already demonstrated as switches in logic gates [19,20,23,24]. For this study, the powdered nanostructured silicon particles were produced from highly doped p-type silicon wafers (Siegert Wafer GmbH, Germany), with an initial resistivity ρ < 0.002 Ωm, by high energy milling for 5 h. The milled p-doped silicon was chosen for this study, due to their electrical characteristics, which present a double-diode behaviour in their transfer characteristics.…”

“…The fully printed current switching transistor (CST) presented in this work has been demonstrated to operate as high power switches for DC, and logic gates at room and cryogenic environment [7, 23, 24]. This device is a promising candidate for high‐voltage AC switching due to its being a majority carrier device with an operation mechanism relying only on the energy provided to the carriers.…”

Unplugged cybersecurity: An approach for bringing computer science into the classroom

“…Background. Logic gates can both ideally or physically represent Boolean logic and typically require one or more inputs to return a single output (Zambou, Britton, & Harting, 2016). The STEM Center has developed an engineering design module that requires teams to create functioning mechanical logic gates using household supplies such as straws, craft sticks, push pins, bobbins, and more.…”

A quantitative structural characterisation of active semiconducting materials (mSi; SiO2; Al2O3; TiO2) for use in printed electronics using a combination of Small Angle Light Scattering (SALS) and Ultra Small Angle X-ray Scattering (USAXS)

“…Printed electronics are viable options for producing electronic devices with very complex circuits that operate at high speed, low voltage and which can be printed on flexible, large coverage area and stretchable substrates at an industrial scale [1][2][3]. Printed electronics play a vital role in the implementation of the Internet of Things (IoT), which promises a seamless interaction between various everyday objects [4][5][6]. Flexible substrates such as textile, paper, PET and rubber are of great interest in the printed electronics industry, as they offer an opportunity to produce electronic devices with unconventional flexibility and agility as needed for the fourth industrial revolution [7].…”