2008
DOI: 10.1103/physrevb.78.245409
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Screening and retardation effects on180°-domain wall motion in ferroelectrics: Wall velocity and nonlinear dynamics due to polarization-screening charge interactions

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Cited by 47 publications
(36 citation statements)
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“…25,28,46,51 Polarization dependent dielectric surface layers 50,52 can inhibit external screening, thus changing conditions for domain evolution. 49,51,53 However, the results suggest only a minor influence of such "dead" layers as (i) domain patterns clearly depend on external conditions such as humidity and (ii) external screening is minimized in dry conditions for which the polarization dependence was observed. Downwards band bending at a newly nucleated positive domain upon application of high negative voltages facilitates electron injection from the top electrode, which allows for screening and larger domain sizes.…”
Section: Domain Size Dependence Of Initial Polarizationmentioning
confidence: 90%
“…25,28,46,51 Polarization dependent dielectric surface layers 50,52 can inhibit external screening, thus changing conditions for domain evolution. 49,51,53 However, the results suggest only a minor influence of such "dead" layers as (i) domain patterns clearly depend on external conditions such as humidity and (ii) external screening is minimized in dry conditions for which the polarization dependence was observed. Downwards band bending at a newly nucleated positive domain upon application of high negative voltages facilitates electron injection from the top electrode, which allows for screening and larger domain sizes.…”
Section: Domain Size Dependence Of Initial Polarizationmentioning
confidence: 90%
“…4 Surface charge screening determines the stabilization of the ferroelectric domains 5 as well as the motion of wall domains. 6 Electrostatic Atomic Force Microscopy (AFM) techniques such as Kelvin Probe Force Microscopy (KPFM) have been used to study ferroelectric domains and surface screening on BaTiO 3 (100) surfaces. [7][8][9] In this case, the surface potential at room temperature exhibits variations due to the differences in charge density between different polarized domains.…”
Section: Introductionmentioning
confidence: 99%
“…Analytical solutions of Ginzburg-Landau mean-field type calculations provide invaluable information about the thermodynamics and kinetics of defect-free domain switching [15,16,17,18], and models of domain walls [3] and their interactions with single defects [19], or with particularly regular, periodically ordered pinning potentials [20], but do not readily describe the inherent randomness. First-principles atomistic simulations, meanwhile, give extremely accurate estimates of domain wall energies and interactions with individual defects [4,21,22,23] • domain wall separating a P U P and P DOW N polarised region in a thin film of Pb(Zr,Ti)O 3 , adapted from [5].…”
Section: Introductionmentioning
confidence: 99%