SDRAM space radiation effects measurements and analysis

Henson, B.G.; McDonald, P.T.; Stapor, W.J.

doi:10.1109/redw.1999.816049

Cited by 15 publications

(4 citation statements)

References 17 publications

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“…In all cases, the stuck bits disappeared within several hours during the functional tests in a vacuum that were waiting for changes in the ion species. However, it could not be confirmed that the stuck bits were related to the total ionizing dose, as was noted by Henson et al (1999) Fig . 5 shows the cross-section values of the SEU, MBU, and SEFI according to the effective LETs.…”

Section:  Seumentioning

confidence: 80%

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

Ryu¹,

Park²,

Chae³

et al. 2012

Journal of Astronomy and Space Sciences

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We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The crosssection values for various single event categories were derived up to ~80 MeVcm 2 /mg. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.

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Section:  Seumentioning

confidence: 80%

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

Ryu¹,

Park²,

Chae³

et al. 2012

Journal of Astronomy and Space Sciences

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“…This part has a 0.35 μm minimum feature size [16]. Radiation effects data on this component was characterized by SEAKR and compares favorably to the data by ICI [8].…”

Section: Discussion Of Dram Components Presented In This Reportmentioning

confidence: 99%

“…CREME96 is used to generate predictions from the SEU test data for on-orbit upset rates and the European Space Agency Space Environment Information System (SPENVIS) [6] tool is used for estimating total dose. Terrestrial accelerated data sets were taken by SEAKR Engineering, The Aerospace Corporation [7], and Innovative Concepts Incorporated [8]. The three groups utilized different techniques for defining error events as single bit upsets versus Single Event Functional Interrupts (SEFIs).…”

mentioning

confidence: 99%

Observations from the Analysis of On-Orbit Data from DRAMs Used in Space Systems

Schaefer

Owen

Rutt

et al. 2009

2009 IEEE Radiation Effects Data Workshop

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Radiation effects such as TID and SEE including single and multiple bit upsets and SEFI modes need to be characterized and considered for space systems using COTS DRAM for natural space radiation environments. We present on-orbit data collected from commercial DRAM devices used in SSRs designed and built by SEAKR Engineering. Upset rates for on-orbit COTS DRAM memories are presented and compared to rates predicted using CREME96 [1] for three generations of commercial DRAM technology including 64 Mb EDO DRAM, 128 Mb SDRAM, and 256 Mb SDRAM. 1

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“…The PROFIT model is used to estimate the proton sensitivity of devices based on heavy ion measurement but conversely it can be also used to estimate heavy ion sensitivity based on proton data. Examples of application of the PROFIT model to estimate device sensitivity for heavy ions can be found in [412,413]. 6.4.3.…”

Section: Calculation Of Seu Rate For Protons and Neutrons Protons And...mentioning

confidence: 99%

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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SDRAM space radiation effects measurements and analysis

Cited by 15 publications

References 17 publications

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

Observations from the Analysis of On-Orbit Data from DRAMs Used in Space Systems

Particle interaction and displacement damage in silicon devices operated in radiation environments

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