Search for fully spin-polarized semiconductor heterostructures: The candidate (Zn,Co)O

Marin, Ivan Silvestre Paganini; Sipahi, Guilherme Matos; Boselli, M. A.; Lima, I. C. da Cunha

doi:10.1063/1.2370751

Cited by 4 publications

(3 citation statements)

References 22 publications

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“…[87][88][89] Our own implementation of the k·p method in this work has been previously tested in calculating the luminescence spectra in δ-doped GaAs, 90 confirming experimental and theoretical electronic structure for GaAs QWs, 91 and (Al,Ga)N/GaN superlattices, 92 identifying fully spin-polarized semiconductor heterostructures, based on (Zn,Co)O, 93 as well exploring polytypic systems consisting of zinc-blende and wurtzite crystal phases in the same nanostructure. 94,95 Before considering confined systems, it is important to investigate the corresponding bulk crystal structure and construct the functional form of the Hamiltonian.…”

Section: Appendix Amentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying an uniaxial strain it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin-lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (> 200 GHz) would significantly exceed the frequency range possible in conventional lasers.

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Section: Appendix Amentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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“…The versatility of the k• p method has been successfully used to obtain the gain spectra in conventional lasers [31,34,35,42,44], as well as to elucidate a wealth of other phenomena, such as the spin Hall effect, topological insulators, and zitterbewegung [88][89][90]. Our own implementation of the k• p method in this work has been previously tested in calculating the luminescence spectra in δ-doped GaAs [91], confirming experimental and theoretical electronic structure for GaAs QWs [92] and (Al,Ga)N/GaN superlattices [93], identifying fully spin-polarized semiconductor heterostructures, based on (Zn,Co)O [94], and exploring polytypic systems consisting of zinc-blende and wurtzite crystal phases in the same nanostructure [95,96].…”

Section: Appendix Asupporting

confidence: 64%

Development and application of the k.p method to investigate spin and optical properties of semiconductor nanostructures

Júnior¹,

de²

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I dedicate this thesis to my parents Paulo and Márcia. I could not put into words all the love and gratitude that I have for them. Among the people that helped me accomplish this thesis, I would like to thank: • Some special people close to me during this process: Débora, Danilo, Nivaldo and Ana Paula for their great support and special thanks to Jessica for her love and patience. • The friends at IFSC that I had the opportunity to interact socially and scientifically throughout the years. Special mention to Tiago, Denis and Carlos, for sharing similar research interests and helping with discussions about physics. • Friends that I made during my stay in Buffalo, especially, Ballav, Jeongsu, Jim Parry and Jimmy P. "The first principle is that you must not fool yourself, and you are the easiest person to fool."-RICHARD P. FEYNMAN (1918-1988) "I think it is much more interesting to live not knowing than to have answers that might be wrong."-RICHARD P. FEYNMAN (1918-1988) "Individual curiosity, often working without practical ends in mind, has always been a driving force for innovation."

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“…Analyzing the spinpolarized charge densities we are able to find those systems with useful characteristics for device assembling. The method was developed for use in III-V systems [24] and was also successfully applied for the ZnO:Co [30] system.…”

Section: Methodsmentioning

confidence: 99%

Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

et al. 2010

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Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obtain it. Si being the basis of modern electronics, Si or other group-IV DMH can be used to build spintronic devices directly integrated with conventional ones. In this work we study the physical properties and the spin-polarization effects of p-type DMH based in group-IV semiconductors (Si, Ge, SiGe, and SiC), by performing self-consistent [Formula: see text] calculations in the local spin density approximation. We show that high spin polarization can be maintained in these structures below certain values of the carrier concentrations. Full spin polarization is attained in the low carrier concentration regime for carrier concentrations in the DMS layer up to approximately 2.0 x 10(19) cm(-3) for Si and up to approximately 6.0 x 10(19) cm(-3) for SiC. Partial, but still important spin polarization can be achieved for all studied group-IV DMH, with the exception of Ge for carrier concentrations up to 6.0 x 10(19) cm(-3). The role played by the effective masses and the energy splitting of the spin-orbit split-off hole bands is also discussed throughout the paper.

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Search for fully spin-polarized semiconductor heterostructures: The candidate (Zn,Co)O

Cited by 4 publications

References 22 publications

Toward high-frequency operation of spin lasers

Toward high-frequency operation of spin lasers

Development and application of the k.p method to investigate spin and optical properties of semiconductor nanostructures

Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

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