Second harmonic generation at a semiconductor–electrolyte interface and investigation of the surface of silicon by the nonlinear electroreflection method

Aktsipetrov, O.A.; Baranova, I. M.; Grigor'eva, L V; Evtyukhov, K; Мишина, Е. Д.; Мурзина, Т. В.; Chernyi, I. V.

doi:10.1070/qe1991v021n08abeh003971

Cited by 14 publications

(5 citation statements)

References 3 publications

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“…The dependence of the second harmonic polarisation on the interfacial electric eld has been used extensively to study the evolution of electric elds at metal electrodejelectrolyte interfaces based on the nonlinear electroreectance studies by Bloembergen et al 28,29 However, fewer studies have exploited EFISHG to study the semiconductor electrodejelectrolyte interface. [30][31][32][33] Experiments on a TiO 2 electrode 34 reported a linear relationship between the applied potential and I SHG at potentials positive of at band (f  ). To rationalise this behaviour, it is important to rst consider the relationship between applied potential (Df, relative to the reference electrode) and the strength of the electric eld across the space charge layer.…”

Section: Introductionmentioning

confidence: 99%

Monitoring interfacial electric fields at a hematite electrode during water oxidation

Saeed

Banerji

et al. 2023

Chem. Sci.

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Section: Introductionmentioning

confidence: 99%

Monitoring interfacial electric fields at a hematite electrode during water oxidation

Saeed

Banerji

et al. 2023

Chem. Sci.

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“…Surface-enhanced EFISH generation at a silver-electrolyte interface was observed shortly afterward [23]. Since 1984 EFISH has been systematically studied at Si(111)-electrolyte interfaces [24][25][26][27][28], and to a lesser extent at other semiconductor-electrolyte interfaces: Cd 3 P 2 (111) [29], CdIn 2 S 4 (111) [30], GaN (001) [31], TiO 2 [32]. These studies revealed that the strength of the DC-electric field which could be applied electrochemically was limited by interface electrochemical reactions, such as oxidation of a silicon surface at anodic potential.…”

Section: Introductionmentioning

confidence: 99%

“…A simple phenomenological model of EFISH based on the "interface field approximation" -which assumes linear dependence of the DC-field-induced nonlinear polarization on interface DCF strength and yields quadratic dependence of EFISH intensity on bias voltage -was developed for the Si-SiO 2 -electrolyte interface in Refs. [25,26]. Since clear deviations from a quadratic bias dependence were observed [33,34], this model was improved by taking into account the nonlinear interference of DC-field induced and field-independent contributions to the nonlinear quadratic polarization as well as retardation and absorption effects [34].…”

Section: Introductionmentioning

confidence: 99%

dc-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy ofSi(001)−SiO2interfaces

et al. 1999

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The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO 2 interfaces is studied experimentally in planar Si(001)-SiO 2 -Cr MOS structures by optical secondharmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon E 1 transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening * of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO 2 layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO 2 interface in silicon-based MOS structures. PACS numbers: 42.65.Ky, 73.65.Qv, 68.35.-p Optical Second Harmonic Generation (SHG) has been one of the most intensively studied phenomena in surface and interface optics [1-3] for the last decade. The interest in SHG stems from its unique sensitivity to the structural and electronic properties of surfaces and interfaces of centrosymmetric media. This unusually high surface/interface-sensitivity comes about because, in the electric dipole approximation, SHG is forbidden in the bulk of materials with inversion symmetry [4,5], but allowed at interfaces, where inversion symmetry is broken by the discontinuity of crystalline structure. Related nonlinear sources of SHG are localized in a thin (several nanometers thick) surface or interface layer. In semiconductors, inversion symmetry is also broken by the DC-electric Field (DCF) in the subsurface Space Charge Region (SCR), which is created by initial band bending and/or external bias application. The lack of inversion symmetry in the SCR results in DC-Electric-Field Induced Second-Harmonic (EFISH) generation, which manifests itself through electromodulation of the SHG intensity. Thus, all important properties of surfaces, buried interfaces and subsurface layers -their charge [6-8], electronic surface state density [9-11], roughness (morphology) [12,13], adsorption (adatom and admolecule surface density) [14-17], initial band bending [18-20], etc. -can, in principle, be determined by means of the SHG probe. The technological importance of ...

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“…The Ex de pends almost linearly on the applied bias [10] for the oxide thicknesses used, and the EISHG intensity should be quadratic in both the bias and the electric field, as is indeed observed in the data. The same quadratic dependence was also observed for thin oxides [5,13,14], though in that case this approxima tion is not expected to be valid. For such oxides the details of the spatial charge distribution should be taken into account.…”

Section: Methodsmentioning

confidence: 48%

“…Fax: +31 24 3652190; e-mail: theoras@sci.kun.nl. [4,5]. Since for electrolytic interfaces the range of field values is restricted by oxidation processes that occur at the silicon surface for anodic potentials, the investigation o f EISHG for m etal-oxide-sem iconductor (M OS) structures seems more promising [6,7].…”

Section: Introductionmentioning

confidence: 99%

Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

et al. 1996

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A bstract T he buried S i ( l l l ) -S i 0 2 interface has been studied in transmission through planar S i-S i0 2-C r MOS structures using DC-electric-field-induced second-harmonic generation (EISHG). The rotational anisotropy and oxide thickness dependence of EISHG have been measured. M ultiple reflections in the oxide layer and interference effects between field-dependent and field-independent contributions to the nonlinear polarization are shown to affect the shape of the EISHG bias dependence. From a simple model the relative size o f field-dependent and field-independent contributions can be estimated. In this way, information about the interface charge distribution can be obtained.

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Second harmonic generation at a semiconductor–electrolyte interface and investigation of the surface of silicon by the nonlinear electroreflection method

Cited by 14 publications

References 3 publications

Monitoring interfacial electric fields at a hematite electrode during water oxidation

Monitoring interfacial electric fields at a hematite electrode during water oxidation

dc-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy ofSi(001)−SiO2interfaces

Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

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