Second-harmonic generation in amorphous silicon nitride microcavities

Lettieri, S.; Finizio, S. Di; Maddalena, P.; Ballarini, V.; Giorgis, Fabrizio

doi:10.1063/1.1526171

Cited by 38 publications

(27 citation statements)

References 23 publications

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“…1(b). 6 Our results are probably also in agreement with the results on a-Si: H films reported by Alexandrova and co-workers. They restricted their investigation to p-polarized SH radiation generated by s-and p-polarized pump radiation and they observed only a detectable level of SH radiation in the p-p configuration.…”

supporting

confidence: 83%

“…SHG has also been applied extensively in the study of the technologically very relevant Si/ SiO 2 interface as obtained from thermal or plasma oxidation of Si wafers. 5 In contrast, the application of SHG on plasma deposited films has not been explored yet, except for the recent studies on a-SiN x : H microcavities by Lettieri et al 6 and on a-Si: H thin films by Alexandrova, Danesh, and Maslyanitsyn. 7,8 In these studies the SH signal was not rigorously characterized while for the a-Si: H films no spectral dependence of the SH signal was investigated.…”

mentioning

confidence: 99%

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Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Kessels

Gielis

Aarts

et al. 2004

Applied Physics Letters

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supporting

confidence: 83%

mentioning

confidence: 99%

Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Kessels

Gielis

Aarts

et al. 2004

Applied Physics Letters

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“…Unexpectedly, CMOS-compatible amorphous silicon nitride films (SiN) have been shown to possess a bulk second-order nonlinearity by measuring strong second-harmonic generation (SHG) from thin films [9][10][11]. Although the exact reason for this strong SHG response remains unclear, it is believed that the complicated composition, crystalline phase, and defects in the film during the deposition may be responsible [10,[12][13][14][15][16].…”

mentioning

confidence: 99%

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

et al. 2017

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We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process. High-performance complementary metal oxide semiconductor (CMOS) compatible materials are essential elements for advanced on-chip photonic devices to realize the future progress in all-optical processing. The ultra-fast speed and high bandwidth of integrated photonic networks continuously require new materials possessing excellent linear and nonlinear optical properties [1,2]. Although silicon (Si) is still the most commonly used CMOS material, the intrinsic drawbacks of Si, such as its narrow bandgap and centrosymmetric structure, highly limit its future applications especially in the visible and ultraviolet spectral regimes [2,3]. Thus, exploring novel CMOScompatible materials with wide bandgap and strong optical nonlinearities is very important for future integrated devices.Many photonic applications rely on nonlinear optical effects. One of the limitations of many nonlinear materials for CMOS-compatible platforms is the lack of second-order nonlinearity due to centrosymmetry. The problem can be overcome by poling [4,5], straining the material [3] or by using multilayer composites [6][7][8]. Unexpectedly, CMOS-compatible amorphous silicon nitride films (SiN) have been shown to possess a bulk second-order nonlinearity by measuring strong second-harmonic generation (SHG) from thin films [9][10][11]. Although the exact reason for this strong SHG response remains unclear, it is believed that the complicated composition, crystalline phase, and defects in the film during the deposition may be responsible [10,[12][13][14][15][16].In this Letter, we show that the strong second-harmonic signal from SiN films can be further enhanced by varying the composition of the films prepared with plasma-enhanced chemical vapor deposition (PECVD). Furthermore, we demonstrate that such composition tuning does not compromise the linear optical properties or optical losses of the material for applications. Our results are crucial for the comprehensive understanding of the linear and nonlinear optical properties in SiN films with different structures, opening the path for further optimization of SiN for on-chip devices.We recognize that there have been previous studies yielding different values for the SHG susceptibility of SiN [9,10,11,17,18]. Samples prepared by sputtering can yield very high values of the su...

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“…In Eqn (17), the nonresonant component χ nr (ω) is assumed constant within the spectral bandwidth ω filter of the optical filters. In other words, if the Raman resonance of frequency appears in the CARS spectrum at ω p + , with ω p the pump frequency, the nonresonant susceptibility is modeled as…”

Section: Image Contrast With and Without Microcavitymentioning

confidence: 99%

“…[14 -16] All of this activity agrees with the general and recent tendency to broaden the ordinary knowledge of nonlinear optics so that traditional concepts can be recast in terms of significant electromagnetic couplings occurring within cavities. Examples are observations of second-and third-harmonic generation, [17,18] Kerr nonlinearities, [19] optical bistability, [20] and so on. Consistent with the above-mentioned research, conventional coherent anti-Stokes Raman scattering (CARS) microscopy [21 -24] can also benefit from the interaction with an optical cavity that introduces interference effects on the signal oscillating between enhancement and inhibition.…”

Section: Introductionmentioning

confidence: 99%

Coherent anti‐Stokes Raman scattering microscopy within a microcavity with parallel mirrors

Marrocco¹,

Nichelatti²

2009

J Raman Spectroscopy

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Coherent anti-Stokes Raman scattering (CARS) microscopy, or micro-CARS, is becoming more and more popular to identify chemical species with notable three-dimensional resolution. In view of this important application, the present work tries to extend the analysis of cavity effects that are well known in other branches of linear and nonlinear optics. In particular, the CARS process taking place within a Fabry-Pérot microcavity (with mirror spacing on the order of the anti-Stokes wavelength) is here examined. Two theoretical cavity models are used and found interchangeable as to the description of the typical phenomenology of enhancement and inhibition expected for the electromagnetic confinement induced by the boundary conditions. These phenomena are responsible of strong alterations in the spatial distribution of micro-CARS, and instructive examples are shown for spherical Raman scatterers of different sizes. To sum them up, the signal enhancement occurs in correspondence of pronounced narrowing and elongation of the emission lobes surrounding the optical axis (coincident with the propagation direction of the collinear laser beams). Conversely, the inhibition is characterized by the ejection of radiation at large angles (with respect to the optical axis) for those wavelengths that do not respect the cavity tuning adjusted on the given anti-Stokes wavelength. The different angular properties of spectrally separated components of CARS signals are then proven useful for the amplification of the contrast defining the quality of CARS imaging. In the end, amplifications of one or two orders of magnitude are calculated depending on different experimental conditions. Limits and future developments of the present approach are discussed in the conclusions.

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Second-harmonic generation in amorphous silicon nitride microcavities

Cited by 38 publications

References 23 publications

Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

Coherent anti‐Stokes Raman scattering microscopy within a microcavity with parallel mirrors

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