Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Kessels, Wmm Erwin; Gielis, Jjh Joost; Aarts, Imp Igor; Leewis, CM Christian; Sanden, van de Mcm Richard

doi:10.1063/1.1812836

Cited by 24 publications

(18 citation statements)

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“…In Fig. 1 also, the data of a spectral scan on rf PECVD a-Si:H are shown as obtained by ex situ SHG experiments in a previous study using similar conditions [8]. This sample has also a thickness of 9 nm and has been deposited at a rate of 13.2 nm/min at a substrate temperature of 250 -C. Fig.…”

Section: Resultsmentioning

confidence: 94%

“…The sensitivity of SHG to surface dangling and strained bonds makes the SHG technique also very appealing for studying a-Si:H deposited by HWCVD as these bonds act as defects states for a-Si:H while they are also candidates for active sites during a-Si:H film growth [5]. In addition to earlier ex situ experiments on a-Si:H deposited by radiofrequency plasma-enhanced chemical vapor deposition (rf PECVD) [6][7][8], we report here the first SHG experiments on HWCVD a-Si:H which have been obtained in situ and also during real-time film growth. …”

Section: Introductionmentioning

confidence: 98%

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Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

et al. 2006

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Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 98%

Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

et al. 2006

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“…Using a photon energy of 1.17 eV, they observed decreasing anisotropic SHG contributions of Si(111)-7×7 during bombardment with 5 keV Ar + ions and deposition of evaporated Si. In recent SHG studies we have investigated a-Si:H thin films deposited with plasma and hot-wire CVD using an Nd:YAG pumped optical parametric oscillator (OPO) system and we have discussed that the SHG response is possibly originating from strain-induced Si-Si and dangling bond surface-states [11,12]. In the present work a femtosecond Ti:Sapphire laser is used to reveal the spectroscopic SHG response of hot-wire CVD a-Si:H thin films and of H-terminated Si(100) during Ar + ion bombardment.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic second harmonic generation as a diagnostic tool in silicon materials processing

Gielis

Stevens

Gevers

et al. 2005

phys. stat. sol. (c)

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Spectroscopic second harmonic generation (SHG) has been applied to study thin layers of amorphous silicon in the second harmonic photon energy range of 2.7 -3.5 eV. The layers were synthesized by hot-wire CVD of hydrogenated amorphous silicon (a-Si:H) and by Ar + ion bombardment of crystalline silicon (c-Si). For a-Si:H a broad feature has been observed in the SHG spectrum. It is discussed that the SHG signal originates from strained Si-Si bonds in the surface or interface region of the a-Si:H film. For H-terminated Si(100) both in spectroscopic and real-time experiments the SHG signal increases by an order of magnitude upon bombardment with 70 eV Ar + ions. We argue that the SHG signal from the amorphized Si layer is generated mainly at the buried interface with c-Si, while an additional contribution seems to originate from the amorphous Si surface region. From the combination of spectroscopic and realtime SHG studies insight into the role of strained bonds in the growth and etching processes of silicon can be gained.

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“…Recently, SHG has been investigated for the real-time monitoring of the growth of hydrogenated amorphous Si, using both the polarization and spectral dependence of the SHG signal, with promising results [86][87][88].…”

Section: Second-harmonic Generation and Efishmentioning

confidence: 99%

Probing surface and interface structure using optics

McGilp

2010

J. Phys.: Condens. Matter

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Optical techniques for probing surface and interface structure are introduced and recent developments in the field are discussed. These techniques offer significant advantages over conventional surface probes: all pressure ranges of gas-condensed matter interfaces are accessible and liquid-liquid, liquid-solid and solid-solid interfaces can be probed, due to the large penetration depth of the optical radiation. Sensitivity and discrimination from the bulk are the two challenges facing optical techniques in probing surface and interface structure. Where instrumental improvements have resulted in enhanced sensitivity, conventional optical techniques can be used to characterize heterogeneous adsorbed layers on a substrate, often with sub-monolayer resolution. Nanoscale lateral resolution is possible using scanning near-field optics. A separate class of techniques, which includes reflection anisotropy spectroscopy, and nonlinear optical probes such as second-harmonic and sum-frequency generation, uses the difference in symmetry between the bulk and the surface or interface to suppress the bulk contribution. A perspective is presented of likely future developments in this rapidly expanding field.

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Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Cited by 24 publications

References 10 publications

Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

Spectroscopic second harmonic generation as a diagnostic tool in silicon materials processing

Probing surface and interface structure using optics

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