Surface
phonon polaritons (SPhPs), the surface-bound electromagnetic
modes of a polar material resulting from the coupling of light with
optic phonons, offer immense technological opportunities for nanophotonics
in the infrared (IR) spectral region. However, once a particular material
is chosen, the SPhP characteristics are fixed by the spectral positions
of the optic phonon frequencies. Here, we provide a demonstration
of how the frequency of these optic phonons can be altered by employing
atomic-scale superlattices (SLs) of polar semiconductors using AlN/GaN
SLs as an example. Using second harmonic generation (SHG) spectroscopy,
we show that the optic phonon frequencies of the SLs exhibit a strong
dependence on the layer thicknesses of the constituent materials.
Furthermore, new vibrational modes emerge that are confined to the
layers, while others are centered at the AlN/GaN interfaces. As the
IR dielectric function is governed by the optic phonon behavior in
polar materials, controlling the optic phonons provides a means to
induce and potentially design a dielectric function distinct from
the constituent materials and from the effective-medium approximation
of the SL. We show that atomic-scale AlN/GaN SLs instead have multiple
Reststrahlen bands featuring spectral regions that exhibit either
normal or extreme hyperbolic dispersion with both positive and negative
permittivities dispersing rapidly with frequency. Apart from the ability
to engineer the SPhP properties, SL structures may also lead to multifunctional
devices that combine the mechanical, electrical, thermal, or optoelectronic
functionality of the constituent layers. We propose that this effort
is another step toward realizing user-defined, actively tunable IR
optics and sources.