Secondary DOF and their effect on the instability of electrostatic MEMS devices

Abstract

The purpose of this work is to demonstrate the significance, and to quantify and model the effect, of secondary Degrees-Of-Freedom (DOF) on the response and instability of electrostatically actuated MEMS devices.Also, a novel reduced-order modeling approach is presented, and is used to interpret and analyze the measured electromechanical response of fabricated test devices. This novel modeling approach is shown to he more efficient than current state-of-the-art reducedrorder models that are based on voltage iterations.

Two-Axis Single-Crystal Silicon Micromirror Arrays

“…In order to achieve actuation voltages of the order of 100 V, the flexures should not be thicker than 3.5 where as to achieve 50 cm ROC values for the mirror structure, the mirror needs to be as thick as 14 . An oxide layer of thickness 0.7 is grown thermally and is patterned inside the flexure beam areas using a 5--thick photoresist (Clariant, AZ9260) (this thick resist provides sufficient step coverage over the surface topography on the wafer).…”