Secondary electron emission yield from vertical graphene nanosheets by helicon plasma deposition

Jin, Xin; Ji, Peiyu; Zhuge, Lanjian; Wu, Xuemei; Jin, Chao

doi:10.1088/1674-1056/ac11dd

Cited by 4 publications

(1 citation statement)

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“…Secondary electron emission (SEE) and the suppression of SEE are applied in various areas such as particle accelerators, plasma physics and information technology. [1,2] The excited electrons in the conduction band of a negative electron affinity semiconductor (NEAS) can be easily emitted from the surface due to the lack of a surface barrier. The mean escape depth (in the µm range) of the excited electrons at the bottom of the conduction band of a NEAS (i.e., thermalized electrons) is much larger than that (in the nm range) of hot electrons.…”

Section: Introductionmentioning

confidence: 99%

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Xie¹,

Dong²,

Liu³

2023

Chinese Phys. B

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The formulas for parameters of negative electron affinity semiconductor NEAS with large λ NEASLD are deduced, respectively, λ is the mean escape depth of secondary electrons; And the methods of obtaining parameters such as λ, B, E pom, maximum δ and δ at 100.0 keV≥E po≥1.0 keV of NEASLD with the deduced formulas are presented, respectively, where B is the probability that an internal secondary electron escapes into vacuum upon reaching the emission surface of emitter, δ is secondary electron yield, E po is incident energy of primary electron, E pom is the E po corresponding to maximum δ. The parameters obtained here were analyzed, it can be concluded that several parameters of NEASLD obtained by the methods presented here agree with those obtained by other authors. The relation between secondary electron emission and photo-emission from NEAS with large mean escape depth of excited electrons is investigated, it concludes that the presented method of obtaining λ is a more accurate method of obtaining corresponding parameter of NEAS with large λph, and that the presented method of calculating B at E po > 10.0 keV is a more widely applicable method of obtaining corresponding parameter of NEAS with large λph, λph is the mean escape depth of photo-electrons.

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Section: Introductionmentioning

confidence: 99%

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Xie¹,

Dong²,

Liu³

2023

Chinese Phys. B

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A review on SEM imaging of graphene layers

Huang,

Gan

2024

Micron

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Secondary electron yield of air-exposed ALD-Al₂O₃ coating on Ag-plated aluminum alloy

Wan 万,

Hu 胡,

Yang 杨

et al. 2024

Chinese Phys. B

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Secondary electron yield (SEY) of air-exposed metals intends to be increased because of air-formed oxide, hydrocarbon and other contaminants. It enhances the possibility of secondary electron multipacting in high-power microwave systems, resulting in undesirable occurrence of discharge damages. Al2O3 coatings have been utilized as passive and protective layers on device packages to provide good environmental stability. We employed atomic layer deposition (ALD) to produce a series of uniform Al2O3 coatings with appropriate thickness on Ag-plated aluminum alloy. The secondary electron characteristics and their variations during air exposure were observed. According to the secondary electron emission of composite layer, the escape depth of electron needs to exceed coating thickness to some extent in order to demonstrate SEY of metallic substrates. Based on experimental and calculated results, the maximum SEY of Ag-plated aluminum alloy has been maintained at 2.45 over 90-days of exposure without obvious degradation by applying 1 nm Al2O3 coatings. In comparison, the peak SEY of untreated Ag-plated aluminum alloy grows from an initial 2.33 to 2.53, exceeding that of 1 nm Al2O3 sample. The ultra-thin ALD-Al2O3 coating substantially enhanced the SEY stability of metal materials, with good implications for the environmental dependability of spacecraft microwave components.

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Secondary electron emission yield from vertical graphene nanosheets by helicon plasma deposition

Cited by 4 publications

References 51 publications

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

A review on SEM imaging of graphene layers

Secondary electron yield of air-exposed ALD-Al₂O₃ coating on Ag-plated aluminum alloy

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Secondary electron emission yield from vertical graphene nanosheets by helicon plasma deposition

Cited by 4 publications

References 51 publications

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

A review on SEM imaging of graphene layers

Secondary electron yield of air-exposed ALD-Al2O3 coating on Ag-plated aluminum alloy

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Secondary electron yield of air-exposed ALD-Al₂O₃ coating on Ag-plated aluminum alloy