Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Ninomiya, Satoshi; Ichiki, Kazuya; Nakata, Yoshihiko; Honda, Yoshiro; Seki, Toshio; Aoki, Takaaki; Matsuo, Jiro

doi:10.1016/j.apsusc.2008.05.063

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…12−16 ToF-SIMS is a versatile and powerful technique that can be applied to various fields, such as materials science, biology, pharmaceuticals, electronics, and forensics. 14,17 It has excellent sensitivity and enables the identification and localization of chemical species on the surface or in the volume of samples with high spatial and mass resolution. 18,19 ToF-SIMS can operate in a static mode that uses a low dose of primary ions (removal of less than 1% of the number of molecules on the surface) to minimize the chemical damage to the sample, making the technique particularly suitable for the discrimination of organic molecules.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The characterization of these systems requires specific analytical techniques. One is time-of-flight secondary ion mass spectrometry (ToF-SIMS). − ToF-SIMS is a versatile and powerful technique that can be applied to various fields, such as materials science, biology, pharmaceuticals, electronics, and forensics. , It has excellent sensitivity and enables the identification and localization of chemical species on the surface or in the volume of samples with high spatial and mass resolution. , ToF-SIMS can operate in a static mode that uses a low dose of primary ions (removal of less than 1% of the number of molecules on the surface) to minimize the chemical damage to the sample, making the technique particularly suitable for the discrimination of organic molecules. , It can also operate in a dynamic mode that uses a high dose of primary ions to progressively erode the surface and analyze underlying layers . This mode allows for measuring the distribution of elements or compounds as a function of depth with high sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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Sputtering Behavior of P3HT under Low-Energy Monoatomic Projectile Bombardment: Insights from Molecular Dynamics Simulations

et al. 2023

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Molecular dynamic computer simulations have been employed to investigate the sputtering process of multilayer poly(3-hexylthiophene) (P3HT) with a layered structure arranged in the Z-direction deposited on a silicon substrate. The sputtering process was induced by low-energy He, Ar, and Xe projectiles. The sputtering yield volume, mass spectra, and structural and chemical damages induced in the bombarded systems are probed depending on the type of projectile and the thickness of the organic overlayer. While most studies are performed with a 500 eV primary kinetic energy and an impact angle of 45°, the effect of these two parameters on the sputtering yield is investigated for the Ar projectile. The main goal is to elucidate the influence of various primary beam properties on the sputtering process and structural and chemical damages occurring in P3HT. The implications of the present results for the chemical analysis of P3HT by secondary ion mass spectrometry (SIMS) or secondary neutral mass spectrometry (SNMS) and low-energy atomic projectiles are discussed. It has been found that the sputtering yield volume is the largest for Ar and the smallest for He. The yield does not depend on the organic overlayer thickness within the computational uncertainty. The number of ejected atoms scaled to the sample atomic density decreases monotonically with depth. Interestingly, the shape of this distribution, known as the information depth distribution, is the same for all investigated projectiles, regardless of their penetration range, which indicates that this quantity is determined by the properties of the sample. Additionally, the projectiles are not deposited equally in the sample volume but are trapped at organic/substrate and interlayer interfaces. The vertical extent of damage is directly related to the projectile range, which is the largest for He and the smallest for Xe. The shape of vertical damage distribution depends in an oscillatory manner on depth. It is shown that the alkyl side chains are mostly damaged. Our results indicate that among all tested projectiles, Ar, followed by Xe, are the best candidates for the chemical analysis of P3HT by SIMS/SNMS techniques.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sputtering Behavior of P3HT under Low-Energy Monoatomic Projectile Bombardment: Insights from Molecular Dynamics Simulations

et al. 2023

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“…It provides information about the chemical, elemental, molecular, and isotopic compositions of the sample with a nanometer depth resolution and sub-micron lateral resolution . Recently, the introduction of large gas cluster ion beams (GCIB) as projectiles has brought improvements over conventional ion beams, especially for the molecular analysis and depth profiling of organic materials. , Large gas cluster projectiles have a low kinetic energy per atom which allows them to eject molecules from organic materials with minimum damage and extreme surface sensitivity…”

Section: Introductionmentioning

confidence: 99%

Probing the Surface Curie Temperature of Ferroelectric P(VDF-ran-TrFE) Copolymers by Argon Gas Cluster Ion Scattering

et al. 2022

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ToF‐SIMS depth profiling of insulating samples, interlaced mode or non‐interlaced mode?

Wang

Jin

Zhang

et al. 2014

Surface & Interface Analysis

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Dual-beam depth profiling strategy has been widely adopted in time-of-flight secondary ion mass spectrometry depth profiling, in which two basic operation modes, interlaced mode and non-interlaced mode, are commonly used. Generally, interlaced mode is recommended for conductive or semi-conductive samples, whereas non-interlaced mode is recommended for insulating samples, where charge compensation can be an issue. Recent publications, however, show that the interlaced mode can be used effectively for glass depth profiling, despite the fact that glass is an insulator. In this study, we provide a simple guide for choosing between interlaced mode and non-interlaced mode for insulator depth profiling. Two representative cases are presented: (i) depth profiling of a leached glass sample and (ii) depth profiling of a single-crystal MgO sample. In summary, the interlaced mode should be attempted first, because (i) it may provide data with reasonable quality, (ii) it is timesaving for most cases, and (iii) it introduces low H/C/O background. If data quality is the top priority and measurement time is flexible, non-interlaced mode is recommended because interlaced mode may suffer from low signal intensity and poor mass resolution. A big challenge is tracking trace H/C/O in a highly insulating sample (e.g., MgO), because non-interlaced mode may introduce strong H/C/O background, but interlaced mode may suffer from low signal intensity. Meanwhile, a C or Au coating is found to be very effective to improve the signal intensity. Surprisingly, the best analyzing location is not on the C or Au coating but at the edge (outside) of the coating.

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Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Cited by 10 publications

References 14 publications

Sputtering Behavior of P3HT under Low-Energy Monoatomic Projectile Bombardment: Insights from Molecular Dynamics Simulations

Sputtering Behavior of P3HT under Low-Energy Monoatomic Projectile Bombardment: Insights from Molecular Dynamics Simulations

Probing the Surface Curie Temperature of Ferroelectric P(VDF-ran-TrFE) Copolymers by Argon Gas Cluster Ion Scattering

ToF‐SIMS depth profiling of insulating samples, interlaced mode or non‐interlaced mode?

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