Secondary particle properties for the ion beam sputtering of TiO2 in a reactive oxygen atmosphere

Bundesmann, Carsten; Amelal, Thomas

doi:10.1016/j.apsusc.2019.04.078

Cited by 10 publications

(6 citation statements)

References 45 publications

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“…The highenergy shoulder extends to higher energies with an increasing emission angle, i.e., a decreasing scattering angle, and with an increasing ion energy. As already discussed in detail in earlier works, 7,8 these high-energy shoulders can be related to directly backscattered and directly sputtered O + ions. Similar to the observations made for The energy distributions as shown in Fig.…”

Section: E Energy Distribution Of Secondary Tio Ionsmentioning

confidence: 53%

“…The observed dependence of the maximum sputtering yield on the ion energy and ion incidence angle is in good agreement with sputtering laws mentioned in the literature. 13 The differential sputtering yield is fitted by a superposition of two cosine functions, as already proposed in earlier studies, 7,8,30…”

Section: Angular Distribution Of Sputtered Ti Particlesmentioning

confidence: 99%

“…5,6 We could confirm this fundamental correlation, among other things, in earlier works related to the reactive IBSD of TiO 2 . These works cover either the properties of the secondary particles for the Ar and Xe ion bombardment of a Ti target and a TiO 2 target in an oxygen-rich atmosphere 7,8 or the properties of the TiO 2 films deposited under the same conditions. [9][10][11] An important aspect of these studies is the wide range in which the sputtering geometry is varied and the focus on sputtered and backscattered secondary ions.…”

Section: Introductionmentioning

confidence: 99%

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Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

Amelal

Pietzonka

Rohkamm

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The ion beam sputtering of a metallic Ti and a ceramic TiO 2 target by bombardment with oxygen ions was investigated systematically. Emphasis was put on the properties of the secondary particles emitted from the target, namely, the angular distribution of the sputtered Ti and the energy distribution of the secondary ions. Ion energies of 0.5, 1.0, and 1.5 keV and incidence angles of 0°, 30°, and 60°were used. The angular distribution of the flux of sputtered Ti particles was determined by measuring the thickness of TiO 2 films that were deposited under emission angles in the range between −40°and +80°. An empirical formula was used to describe the angular distribution as a superposition of an isotropic and an anisotropic cosinelike function. Increasing the ion energy or decreasing the ion incidence angle leads to a more isotropic emission of the sputtered Ti particles. The mass and energy distribution of the secondary ions were measured using an energy-selective mass spectrometer. The most prevalent ion species are O + , O 2 + , Ti + , and TiO +. Ion energy and sputtering geometry, i.e., the combination of an ion incidence angle and an emission angle, were found to have a strong influence on the energy distribution of the secondary ions.

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Section: E Energy Distribution Of Secondary Tio Ionsmentioning

confidence: 53%

Section: Angular Distribution Of Sputtered Ti Particlesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

Amelal

Pietzonka

Rohkamm

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Deshalb wurden am Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM) in den vergangenen Jahren umfangreiche, systematische Untersuchungen zum Ionenstrahlzerstäuben an verschiedenen Materialsystemen durchgeführt: Ag (Metall, [7,8]), Ge (Halbleiter, [9,10]), TiO 2 (Dielektrikum, [11,[13][14][15][16]) oder SiO 2 (Dielektrikum, [17,18]…”

Section: Ion Beam Sputter Deposition -Fundamentals and Application Founclassified

Schichtabscheidung mittels Ionenstrahlzerstäuben

Bundesmann

2019

Vak Forsch Prax

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Summary Ion Beam Sputter Deposition – Fundamentals and Application for Tailoring Thin Film Properties Ion beam sputter deposition (IBSD) is a PVD technique, which, in comparison to other PVD techniques, is known to produce thin films with desirable properties, for instance, with improved adhesion, dense film structure, less defects, higher purity, less particle contamination, and better controlled composition. Recent systematic and comprehensive investigations of the fundamentals of the whole IBSD process revealed previously unemployed opportunities for tailoring thin film properties over a wide range. The main process parameters were identified to be the scattering geometry and the ion species, or, to be more precise, the mass of the primary ion relative to the mass of the target particle. By choosing these parameters appropriately, structural, optical or electrical properties, to name but a few, can be adjusted according to the technological requirements. The present contribution aims on illustrating these opportunities by presenting the main fundamentals and selected examples.

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“…IBSD is distinguished by the highest energies of forming particles. as well as a large number of parameters affecting the deposition process and the possibility of achieving a higher vacuum in the operating mode [27][28][29][30][31][32][33][34]. This allows fine varying of the electrically conductive, structural, optical, mechanical, and other properties of the films during deposition, and to deposit more uniform layers in thickness and composition over large areas of the substrates.…”

Section: Introductionmentioning

confidence: 99%

Gas Sensitivity of IBSD Deposited TiO2 Thin Films

et al. 2022

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TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4 and O2 on the electrically conductive properties of annealed TiO2 thin films in the operating temperature range of 200–750 °C were studied. The prospects of IBSD deposited TiO2 thin films in the development of high operating temperature and high stability O2 sensors were investigated. TiO2 films with a thickness of 130 nm and annealed at 800 °C demonstrated the highest response to O2, of 7.5 arb.un. when exposed to 40 vol. %. An increase in the annealing temperature of up to 1000 °C at the same film thickness made it possible to reduce the response and recovery by 2 times, due to changes in the microstructure of the film surface. The films demonstrated high sensitivity to H2 and nitrogen oxides at an operating temperature of 600 °C. The possibility of controlling the responses to different gases by varying the conditions of their annealing and thicknesses was shown. A feasible mechanism for the sensory effect in the IBSD TiO2 thin films was proposed and discussed.

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Secondary particle properties for the ion beam sputtering of TiO2 in a reactive oxygen atmosphere

Cited by 10 publications

References 45 publications

Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

Schichtabscheidung mittels Ionenstrahlzerstäuben

Gas Sensitivity of IBSD Deposited TiO2 Thin Films

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