SEE and TID test results of 1 Gb flash memories

Langley, T.; Murray, Paul C.

doi:10.1109/redw.2004.1352905

Cited by 23 publications

(6 citation statements)

References 2 publications

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“…As shown, the voltage sharply decreases with dose, and due to this fact, the program operation fails a little after 50 krad(Si). Large variations in the dose to failure are reported, depending on the operating conditions during the TID exposure [44], [45], [84]- [86], showing from time to time promising improvements in the TID tolerance of commercial Flash memories. Charge pumps are also sensitive to heavy ions [45], [87], [88], and issues related to single event gate rupture have been reported.…”

Section: Radiation Effectsmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

139

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We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.Index Terms-Ferroelectric devices, flash memory, magnetoresistive devices, nonvolatile memory, phase change memory, radiation effects. I. OVERVIEWN ON-VOLATILE memories (NVMs) are used in a variety of space applications, as data or code memories, and are increasingly needed for future missions. This paper will discuss the technologies and devices available for non-volatile storage in the mainstream and in the rad-hard market, with a strong attention to the radiation sensitivity, which is of primary importance for harsh environments such as space.The work is organized as follows: we will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts. In particular, charge-based, phase-change, ferroelectric, and magnetoresistive memories will be presented, with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues and critical building blocks. A. Key Definitions and MetricsA non-volatile memory is a memory that retains information when powered off. Different terms are used to indicate the act of storing a digital value in a non-volatile memory bit, depending on the memory type and architecture. In charge-based storage, the terms program and erase are used to indicate the injection of Manuscript negative charge into and its removal from (or injection of positive charge into) the charge storage element, respectively. In the context of phase change memories, the terms set and reset are used to indicate the operations leading to the crystallization and amorphization of the phase-change material. For other memories, such as ferroelectric or magnetic, the term write is simply used, as for SRAMs and DRAMs. The association of these operations and terms with the stored digital value ("0" or "1") is arbitrary. In the following we will stick to the conventions most commonly used for each memory type.In addition to familiar parameters such as speed, power consumption, and density, two additional metrics are of main importance for non-volatile memories: retention and endurance. This is because wear-out is usually much stronger in non-volat...

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Section: Radiation Effectsmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

139

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“…As the amount of data collected increases, current and future satellites require more and more memory space for their various missions. A synchronous dynamic random access memory (SDRAM) mass memory unit (MMU) has been developed for use in satellite systems for future applications that require high-speed data processing and large data storage (Langley & Murray 2004). Recently, we developed a SDRAM MMU using a domestic memory core.…”

Section: Introductionmentioning

confidence: 99%

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology

Ryu¹,

Park²,

Chae³

et al. 2012

Journal of Astronomy and Space Sciences

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We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The crosssection values for various single event categories were derived up to ~80 MeVcm 2 /mg. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.

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“…The maximum total dose that can be withstood by a Flash memory not only changes from device to device [39,42], but also depends on the failure criterion and on the operating conditions during exposure. The failure dose of a NAND Flash memory can be defined in different ways, that are symptoms of radiation damage to a specific part of the memory: ability to program and erase, time to program, number of read errors, standby supply current, access time, etc.…”

Section: Total Ionizing Dose Effectsmentioning

confidence: 99%