Previous research has shown that the hybridization of
N 2p and
O 2p orbitals effectively suppresses the electrical activity of oxygen
vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, poses a significant challenge
due to nitrogen’s limited solubility in the material. In this
study, a new method utilizing plasma-enhanced chemical vapor deposition
with high-energy nitrogen plasma was explored to enhance the nitrogen
solubility in the material. By adjusting the N2 and O2 carrier gas ratio, we could tune the thin film’s bandgap
from 4.64 to 3.25 eV, leading to a reduction in the oxygen vacancy
density from 32.89% to 19.87%. GaON-based photodetectors exhibited
superior performance compared to that of Ga2O3-based devices, with a lower dark current and a faster photoresponse
speed. This investigation presents an innovative approach to achieving
high-performance devices based on Ga2O3.