Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45nm

Roule, A.; Amuntencei, M.; Deronzier, E.; Haumesser, Paul‐Henri; Silva, S. Da; Avale, X.; Pollet, Olivier; Baskaran, Rajashree; Passemard, G.

doi:10.1016/j.mee.2007.06.014

Cited by 37 publications

(21 citation statements)

References 12 publications

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“…Thin films containing the mid- to late-first-row transition metals have many important existing and future applications. , In the microelectronics area, copper has replaced aluminum as the interconnect material in integrated circuits due to its lower resistivity and higher resistance to electromigration . Ultrathin (2–8 nm) manganese–silicon–oxygen layers have been proposed as replacements for existing nitride-based copper diffusion barrier layers in future devices .…”

Section: Introductionmentioning

confidence: 99%

Volatility and High Thermal Stability in Mid- to Late-First-Row Transition-Metal Diazadienyl Complexes

Knisley

Saly²,

Heeg

et al. 2011

Organometallics

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Treatment of MCl 2 (M = Cr, Mn, Fe, Co, Ni) with 2 equiv of lithium metal and 1,4-di-tertbutyl-1,3-diazadiene ( tBu2 DAD) in tetrahydrofuran at ambient temperature afforded Cr( tBu2 DAD) 2 (38%), Mn( tBu2 DAD) 2 (81%), Fe( tBu2 DAD) 2 (47%), Co( tBu2 DAD) 2 (36%), and Ni( tBu2 DAD) 2 (41%). Crystal structure determinations revealed monomeric complexes that adopt tetrahedral coordination environments and were consistent with tBu2 DAD radical anion ligands. To evaluate the viability of M( tBu2 DAD) 2 (M = Cr, Mn, Fe, Co, Ni) as potential film growth precursors, thermogravimetric analyses, preparative sublimations, and solid-state decomposition studies were performed. Mn( tBu2 DAD) 2 is the most thermally robust among the series, with a solid-state decomposition temperature of 325 °C, a sublimation temperature of 120 °C/0.05 Torr, and a nonvolatile residue of 4.3% in a preparative sublimation. Thermogravimetric traces of all complexes show weight loss regimes from 150 to 225 °C with final percent residues at 500 °C ranging from 1.5 to 3.6%. Thermolysis studies reveal that all complexes except Mn( tBu2 DAD) 2 decompose into their respective crystalline metal powders under an inert atmosphere. Mn( tBu2 DAD) 2 may afford amorphous manganese metal upon thermolysis.

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Section: Introductionmentioning

confidence: 99%

Volatility and High Thermal Stability in Mid- to Late-First-Row Transition-Metal Diazadienyl Complexes

Knisley

Saly²,

Heeg

et al. 2011

Organometallics

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“…When the feature size of ultra-large scale integrated circuit shrinks to 22 nm or below, the conventional Ta/TaN barrier layer will be inadequate because of the large film resistance and gap filling problems [1,2]. Therefore, the idea of direct copper electrodeposition on diffusion barrier layer is appealing because it will simplify the manufacturing procedure as well as improve the conformance during dual damascene processing of interconnects [3].…”

Section: Introductionmentioning

confidence: 99%

Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing

Cheng

Wang

Jiang

et al. 2015

Applied Surface Science

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“…Therefore, a barrier layer between Cu and SiO2 or other interlayer dielectric material is required to contain the metal, seal it off from reaction with O2 or H2O, and improve adhesion. In addition, barrier layers must be  2 nm thick to reduce the electrical resistivity of the interconnect structure and to fit inside sub-22 nm device features (1)(2)(3)(4)(5)(6). TaN and WNx (x = 0.5-1) films are currently used as Cu barrier layers (7)(8)(9).…”

Section: Introductionmentioning

confidence: 99%

Manganese Precursor Selection and the Thermal Atomic Layer Deposition of Copper/Manganese Alloy Films

2014

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This paper describes the thermal ALD growth of Cu/Mn alloy films using the precursors Cu(OCHMeCH2NMe2)2, Mn2(tBuNCH-C(tBu)(Me)O)4, and BH3(NHMe2) at 160 °C. Deposition rates of about 0.09 Å/cycle were observed on a variety of substrates. Cu:Mn ratios of about 70:30 were obtained by controlling the number of Cu and Mn cycles. X-ray photoelectron spectroscopy confirms the presence of metallic Cu and Mn within the Cu/Mn alloys. Similar precursors and chemistry were used to deposit 35-50 nm thick Cu/Mn/Cu film stacks on Ru, Pd, and Pt substrates. Depth profiling of stacks that were overcoated with an SiO2 layer showed that the Mn atoms diffuse to the SiO2/Cu interface in samples grown on Pd and Pt, both in as-deposited films and those that were annealed at 350 °C. With Ru substrates, the Mn atoms collected slightly at the SiO2/Cu interface, but primarily remained distributed throughout the film in as-deposited and annealed samples.

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Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45nm

Cited by 37 publications

References 12 publications

Volatility and High Thermal Stability in Mid- to Late-First-Row Transition-Metal Diazadienyl Complexes

Volatility and High Thermal Stability in Mid- to Late-First-Row Transition-Metal Diazadienyl Complexes

Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing

Manganese Precursor Selection and the Thermal Atomic Layer Deposition of Copper/Manganese Alloy Films

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