Seeded growth of AlN bulk crystals in m- and c-orientation

Lü, Peng; Collazo, Ramón; Dalmau, Rafael; Durkaya, Goksel; Dietz, N.; Raghothamachar, Balaji; Dudley, Michael; Sitar, Zlatko

doi:10.1016/j.jcrysgro.2009.10.008

Cited by 136 publications

(100 citation statements)

References 28 publications

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“…Refs. [149][150][151][152][153][154]). Consequently, strong absorption bands appear in the crystals near 4.9 eV, which is very detrimental to the LEDs' performance.…”

Section: In Alnmentioning

confidence: 99%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

213

177

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“…Refs. [149][150][151][152][153][154]). Consequently, strong absorption bands appear in the crystals near 4.9 eV, which is very detrimental to the LEDs' performance.…”

Section: In Alnmentioning

confidence: 99%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

213

177

View full text Add to dashboard Cite

“…This specimen shape particularly suitable for uniaxial pressure measurements was cut from AlN single crystal wafer material grown by the physical vapor transport method on N-polar c-plane (0001) seeds [25][26][27]. Polar sample surfaces were polished to an optical finish in order to facilitate a homogenous strain distribution throughout the sample after application of uniaxial stress onto the corresponding c-plane surfaces.…”

Section: Methodsmentioning

confidence: 99%

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

et al. 2014

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We studied bulk crystals of wurtzite AlN by means of uniaxial pressure-dependent Raman measurements. As a result, we derive the phonon pressure coefficients and deformation potentials for all zone center optical phonon modes. For the A1 and E1 modes we further experimentally determined the uniaxial pressure dependence of their longitudinal optical -transverse optical (LO-TO) splittings. Our experimental approach delivers new insight into the large variance among previously reported phonon deformation potentials, which are predominantly based on heteroepitaxial growth of AlN and the ball-on-ring technique. Additionally, the measured phonon pressure coefficients are compared to their theoretical counterparts obtained by density functional theory implemented in the SIESTA package. Generally, we observe a good agreement between the calculated and measured phonon pressure coefficients but some particular Raman modes exhibit significant discrepancies similar to the case of wurtzite GaN and ZnO, clearly motivating the presented uniaxial pressure-dependent Raman measurements on bulk AlN crystals.

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“…Выбор методов синтеза пленок AlN определяется тре-бованиями технологии приборных структур, в частности: тонкие пленки AlN (до 1 мкм) возможно синтезировать методами молекулярно-пучковой эпитаксии [7][8][9], хими-ческого осаждения из газовой (паровой) фазы [7,10,11], нитридизации поверхностных слоев [12][13][14][15], реактив-ного ионно-плазменого или магнетронного осажде-ния [7,[16][17][18][19]. Процесс синтеза пленок нитрида алю-миния методом молекулярной-пучковой эпитаксии яв-ляется нетривиальным и дорогостоящим.…”

Section: Introductionunclassified

Влияние Концентрации Кислорода В Составе Газовой Плазмообразующей Смеси На Оптические И Структурные Свойства Пленок Нитрида Алюминия

Лубянский¹,

Bondarev²,

Сошников³

et al. 2018

Физика И Техника Полупроводников

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In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.

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Seeded growth of AlN bulk crystals in m- and c-orientation

Cited by 136 publications

References 28 publications

Deep traps in GaN-based structures as affecting the performance of GaN devices

Deep traps in GaN-based structures as affecting the performance of GaN devices

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

Влияние Концентрации Кислорода В Составе Газовой Плазмообразующей Смеси На Оптические И Структурные Свойства Пленок Нитрида Алюминия

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