Seeded growth of GaN single crystals from solution at near atmospheric pressure

Feigelson, Boris N.; Frazier, R. M.; Gowda, M.; Freitas, J. A.; Fatemi, M.; Mastro, Michael A.; Tischler, Joseph G.

doi:10.1016/j.jcrysgro.2008.06.037

Cited by 19 publications

(13 citation statements)

References 15 publications

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“…A detailed description of the growth process is given in Ref. [6] and references therein. Unintentionally doped, seeded, and spontaneously nucleated single crystals of various sizes and thicknesses were obtained with this growth method.…”

Section: Methodsmentioning

confidence: 99%

“…Note that the XRD data presented here are from a randomly selected crystal from a particular growth run, which does not represent the best grown material. Measurements on different specimens from very similar growth runs occasionally produce outstanding FWHM rocking curve values of 16 arcsec [6].…”

Section: Xrd and Raman Scatteringmentioning

confidence: 96%

“…In this article, we report on a study of the optical and electrical properties of GaN crystals grown by the near atmospheric pressure solution growth technique [6]. We used electron paramagnetic resonance (EPR) spectroscopy, micro-Raman spectroscopy, photoluminescence (PL) spectroscopy, and PL-imaging to characterize free-standing unintentionally doped single crystals.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Garces¹,

Feigelson²,

Freitas³

et al. 2010

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Xrd and Raman Scatteringmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Garces¹,

Feigelson²,

Freitas³

et al. 2010

Journal of Crystal Growth

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“…A growth rate of 1 m/h was reported for growth on metalorganic vapor phase epitaxy (MOVPE) GaN templated sapphire up to 3-in in diameter. Also, at nearly atmospheric pressure and temperature of about 800 C, employing another chemical solvent, seeded growth on an HVPE-GaN seed was demonstrated [35]. Up to now, the reported growth rates of a few micrometers per hour are not suited for bulk crystal growth.…”

Section: Solution Growth At Lower Pressure Lower Temperaturesmentioning

confidence: 99%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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“…Several techniques are being used to grow GaN substrates [1][2][3]. Among them, the ammonothermal technique [4][5][6], which employs supercritical ammonia to crystallize nitrides, and is similar to the industrial growth of a-quartz by the hydrothermal process, offers the possibility for simultaneous production of multiple GaN crystals of high quality.…”

Section: Introductionmentioning

confidence: 99%