Selected Low Energy Nuclear Reaction Data

Feldman, Lulu; Picraux, S. T.; Abeyta, Henry J.; Amsel, G.; Butler, J. W.; Mayer, H.J.

doi:10.1016/b978-0-12-480860-7.50011-3

Cited by 12 publications

(3 citation statements)

References 155 publications

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“…where, C cal and S cal are the count and the stopping power for the calibration (Si 3 N 4 ), while C sam and S sam stand for the same parameters for the sample 40 . Surface roughness measurements were made using a Talysurf 5M (Ranck Taylor Hobson) profilometer on all the samples, except for those submitted to pin-on-disc tests.…”

Section: Sample Characterizationmentioning

confidence: 99%

Surface modification of titanium by plasma nitriding

et al. 2003

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A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere) were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N 2 +20%H 2 or 20%N 2 +80%H 2 ; sample temperature during nitriding of 600 or 800 °C.

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Section: Sample Characterizationmentioning

confidence: 99%

Surface modification of titanium by plasma nitriding

et al. 2003

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“…3. Actual implanted B doses ͑1.2 to 1.3 ϫ 10 14 cm Ϫ2 ͒ were measured using nuclear reaction analysis, 8 assuming that the B in B 10 H x ϩ is present in its natural isotopic abundance. The broadening of each marker layer after annealing was analyzed separately by comparing it with its corresponding counterpart in the unannealed sample.…”

Section: Methodsmentioning

confidence: 99%

Transient Enhanced Diffusion of B in Si Implanted with Decaborane Cluster Ions

Sosnowski

Albano

et al. 2002

J. Electrochem. Soc.

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Cluster ions, obtained by ionization of decaborane (B 10 H 14 ) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion ͑TED͒. TED of B in Si implanted with mass analyzed B 10 H x ϩ cluster ions at energies of 2, 5, and 12 keV is compared with TED from 1.2 keV B ϩ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.Ion implantation, which for over 30 years has been the main technique of doping semiconductors, faces major challenges at the low ion energies required for the formation of very shallow junctions of future generations of silicon devices. The International Technology Roadmap for Semiconductors projects the need for 20 to 33 nm junctions in the 0.1 m devices projected for the year 2005. 1 The problem is especially severe for the light ion B ϩ that needs to be implanted at energies Ͻ1 keV for such shallow depths. Extraction from an ion source and transport of such low energy ions are hindered by the Coulomb forces ͑beam space-charge͒ severely limiting throughput for commercial semiconductor implantation. An attractive approach that overcomes this problem is based on energetic beams of cluster ions, which produce implantation effects equivalent to those of monomer ions at a lower energy, due to partitioning of the cluster kinetic energy among its constituent atoms. Thus, each B atom in a B 10 ϩ cluster ion carries only one-tenth of the beam energy. Moreover, the charge for a given atom fluence decreases by the same factor, reducing the beam space-charge as well as wafer charging.The final depth profiles of B in Si are defined as much by the implantation as by diffusion during dopant activation annealing ͑see Fig. 1͒. In the case of shallow B-doped junctions, the critical phenomenon is transient-enhanced diffusion ͑TED͒, which may exceed equilibrium diffusion by orders of magnitude. 2 In assessing the feasibility of the formation of ultrashallow junctions with cluster ions, it is important to show that TED in this case is at least not larger than in the case of B ϩ ions.For boron, a cluster of ten atoms exists naturally in the form of a molecule of decaborane, B 10 H 14 . Decaborane implantation into Si, first reported in 1996, was used for fabrication of an experimental p-type metal oxide semiconductor ͑MOS͒ transistor by Fujitsu in collaboration with Kyoto University, where the implantation was performed. 3 The ion beam, however, was not mass analyzed, and the exact nature of the implanted species could not be confirmed. It was suggested that implantation of B using decaborane ions may reduce TED. Subsequent measurements of TED on Si samples, implanted with 5 keV decaborane ions, showed that TED appears to be the same ...

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“…Nitrogen depth profiles were obtained from 14 N(p,γ ) 15 O nuclear reaction [34] using the 400 kV ion implanter at the Institute of Physics-UFRGS with protons accelerated to 278 keV.…”

Section: Methodsmentioning

confidence: 99%

Near-surface composition and tribological behaviour of plasma nitrided titanium

Kapczinski

Kinast

Santos

2003

J. Phys. D: Appl. Phys.

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Near-surface composition and tribological behaviour of plasma nitrided commercially pure (CP) Ti have been investigated using x-ray diffraction, nuclear reaction analysis, scanning electron microscopy, wear assays with stainless steel Gracey scaler and sonic apparatus, and friction coefficient measurements. The total wear behaviour can be divided into two steps. The first step is the growth of an oxynitride layer. The second step is the breakdown of the oxynitride layer during which debris is produced, increasing the friction coefficient. Each sample exhibits features that correlate with the near-surface composition. For instance, the presence of thin layers of ε-Ti 2 N and δ-TiN precipitating on the near-surface region control the transition from the first to the second step.

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Selected Low Energy Nuclear Reaction Data

Cited by 12 publications

References 155 publications

Surface modification of titanium by plasma nitriding

Surface modification of titanium by plasma nitriding

Transient Enhanced Diffusion of B in Si Implanted with Decaborane Cluster Ions

Near-surface composition and tribological behaviour of plasma nitrided titanium

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