Selection of thin film capacitor dielectrics

A study on the thin-film capacitor with high heatproof property and high reliability by using anodized film of Al3Hf intermetallic compound

“…Almost no change in tan G and TCC is observed, even if the anodization voltage is decreased to 10 V and the anodized layer thickness is reduced. The value of tan G is found to be smaller than 1%, which is the practical standard value for a thin-film capacitor [7]. Since defects such as pinholes become generally more noticeable with decreasing anodized layer thickness, reduction of the oxide thickness has a limit.…”

Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability

“…From this figure, it is found that TCC increases slightly, but tan G undergoes practically no change when the anodization voltage is decreased to 30 V. A slight increase of tan G is also observed when the anodization voltage is decreased to 10 V and the anodized oxide thickness is reduced. However, the value of tan G is smaller than 1%, which is the standard value needed for practical use in low-loss capacitors [8]. Since it is generally known that the number of defects such as pinholes increases with decreasing oxide thickness, the reduction of oxide thickness is limited.…”

Characterization and dielectric properties of GeOx thin films prepared by radio frequency (RF) reactive sputtering

“…Germanium oxides have a forbidden bandwidth which has been reported to be larger than that of Ta 2 O 5 films [1][2][3][4][5]. Ta 2 O 5 films were the most preferable dielectric materials for the thin film capacitor which gives good dielectric properties.…”

“…Ta 2 O 5 films were the most preferable dielectric materials for the thin film capacitor which gives good dielectric properties. So, we think that germanium oxides capacitors should have interesting dielectric properties [1,2,[4][5][6][7].…”