Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Analysis and simulation of the in-situ time-resolved reflectivity recorded during the growth of GaN on GaAs (110) substrate

“…Many studies on the subject are focused on the growth process of high quality cubic GaN, which is interesting for research purpose as it presents a direct band gap of 3.23 eV at room temperature and a centrosymmetric lattice. 1,2 Although the properties such as small effective masses, high doping efficiency, and high carrier mobility are attractive, the interest in the cubic GaN is limited because of the difficulties involved in its growth. For example, it possible to grow cubic GaN epilayers on the GaAs (001) substrate, but the nitridation condition of the surface strongly impacts the quality of the GaN layer, leading to the presence of wurtzite phase inclusions when there is excessive or insufficient nitridation.…”

“…The origin of the hexagonal phase is related to the structural defects emerging during the GaN growth, such as the interfacial roughness, dislocations, and amorphous phase inclusions. Many studies on the subject are focused on the growth process of high quality cubic GaN, which is interesting for research purpose as it presents a direct band gap of 3.23 eV at room temperature and a centrosymmetric lattice 1 , 2 . Although the properties such as small effective masses, high doping efficiency, and high carrier mobility are attractive, the interest in the cubic GaN is limited because of the difficulties involved in its growth.…”