Selective-area growth and magnetic characterization of lateral MnAs nanowires

Katô, Hiroaki; Sakita, Shinya; Hara, Shinjiro

doi:10.1016/j.jcrysgro.2014.09.020

Cited by 4 publications

(12 citation statements)

References 17 publications

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“…The observed behavior can be understood qualitatively by assuming that the NC arrangement consists of different MDs, which is in accordance with the MFM observations. 22,33 Assuming a similar MD structure as observed by MFM in the comparable NC arrangement in Fig. 2(b), the NC arrangement investigated may exhibit a complex MD structure, i.e., a single MD for each of the NCs or even two MDs in one single NC.…”

mentioning

confidence: 54%

“…This appears to be a likely reason because we have observed the lateral MnAs nanowire formation with lengths of 5 lm or longer on single-crystalline AlGaAs buffer layers grown in similar SiO 2 mask openings on GaAs(111)B substrates. 33 As shown in Fig. 2(a), some of the NCs have an elongated or almost regular polygonal shape with well-defined crystal facets, although the size uniformity of the NCs is rather poor, while others are probably polycrystalline.…”

mentioning

confidence: 93%

“…However, we believe that relatively long lateral MnAs nanowires can be obtained by the present approach as in the case of the SA-MOVPE on GaAs(111)B substrates. 33 Figure 2(b) shows an MFM image of the same structure presented in Fig. 2(a) recorded at room temperature after applying B ¼ 1000 G along the direction indicated by the thick white arrow.…”

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confidence: 99%

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Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

Sakita

Hara

Elm

et al. 2016

Applied Physics Letters

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confidence: 54%

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confidence: 93%

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Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

Sakita

Hara

Elm

et al. 2016

Applied Physics Letters

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“…Thus, the cluster growth only took place in mask openings intentionally prepared, making it possible to actively tune the clusters' size, shape, and position [25][26][27][28]. Figure 1 shows scanning electron microscopy images of the two nanocluster arrangements prepared.…”

Section: Resultsmentioning

confidence: 99%

“…The formation of magnetic domains in lateral MnAs nanowires was investigated in detail by Kato et al [28] using magnetic force microscopy (MFM). They found that lateral nanowires can exhibit a complex domain structure depending on the nanocluster's dimensions [28].…”

Section: Resultsmentioning

confidence: 99%

Analysis of magnetic random telegraph noise in individual arrangements of a small number of coupled MnAs nanoclusters

et al. 2015

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The temporal dependence of the resistance of MnAs nanocluster arrangements grown by selective-area metal-organic vapor-phase epitaxy is investigated at different temperatures. The resistance of such arrangements exhibits random telegraph noise with jumps between discrete resistance levels. The effect is attributed to thermally activated switching of the magnetic domain structure resulting in alterations of spin-dependent scattering between the MnAs clusters of the arrangements. The behavior can be qualitatively understood by a simple model in which it is assumed that the nanocluster arrangement consists of three domains in accordance with investigations by magnetic force microscopy. The magnetizations of the outer larger domains remain fixed, whereas the magnetization of a smaller intermediate domain (or domain wall) exhibits thermally activated switching between local minima of its energy landscape. The results of the model indicate that the time scale of an actual switching event of the entire intermediate domain comprises the nucleation of a seed domain consisting of a few thousand Mn spins followed by the transformation of the entire domain by domain-wall motion in order to reorient its magnetization.

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Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices

Hara

2023

Jpn. J. Appl. Phys.

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We investigate the aspect ratio and thickness dependence of magnetic domain formation in multiple types of ferromagnetic Ni nanolayer electrode patterns. Controlling magnetic domains is critical for spintronic devices using a group IV semiconductor, e.g., Si and Ge, nanowire as the electrodes with magnetic tunnel junction require parallel and anti-parallel magnetization configurations. Single magnetic domains are obtained in the Ni nanolayer electrode patterns on SiO2/Si substrate with the aspect ratio of 20 and the thickness of 40 nm even under the as-deposition condition, while other electrode patterns are mostly showing multiple magnetic domains. The results obtained by magnetic force microscopy also show that the magnetization switching is observed in the electrode pattern with a single magnetic domain. The results in this study show that the suitable design of the dimensions of nanolayer patterns is a key to constructing a single magnetic domain in a ferromagnetic electrode for nanowire spintronic devices.

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Selective-area growth and magnetic characterization of lateral MnAs nanowires

Cited by 4 publications

References 17 publications

Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

Analysis of magnetic random telegraph noise in individual arrangements of a small number of coupled MnAs nanoclusters

Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices

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