Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

Abstract

Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH 3 in helium J.

Patterning 2D materials for devices by mild lithography

“…This rather simple concept is still used today not only to fabricate electronic devices, like transistors, or to contact samples by the deposition of conducting tracks, but also in more sophisticated ways as in the case of selective area growth of nanowires. 2 Common to all these techniques is that, in the structuring process of the sacrificial layer, either the chemical bonds of the resist are broken, or polymerization is induced locally, depending on whether a positive or negative tone resist is used. This makes it possible to dissolve the treated (untreated) areas of the resist in a suitable developer solution.…”

Analyses of magnetization switching and magnetic domains in lateral MnAs nanowires in combination with structural characterization

“…However, the performance of a device fabricated by these methods possibly deteriorates owing to process-induced damage and a relatively low size uniformity. To solve such a possible problem caused by device processes, we have proposed and demonstrated a bottomup-type fabrication method for ferromagnetic nanoclusters (NCs) [12][13][14] and lateral NWs 15) on semiconducting substrates, for example, GaAs(111)B and Si(111) substrates, by selective-area metal-organic vapor phase epitaxy (SA-MOVPE). This technique enables us to control the size, density, position, and shape of the nanostructures without any process-induced damage and contamination.…”