The quality of interfaces and surfaces is crucial for the performance of nanoscale devices. A pertinent example is the close tie between current progress in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices and the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these only exist for InAs/Al hybrids, which precludes the use of other, potentially better material combinations in functional devices. We present a crystal growth platform based on three-dimensional structuring of growth substrates for synthesising semiconductor nanowires with in-situ patterned superconductor shells, which enables independent choice of material by eliminating etching. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium.One dimensional semiconductor (SE) nanowires (NWs) proximity coupled to superconductors (SU) have attracted considerable attention from the condensed matter community since the prediction 1,2 and observation of Majorana zero-modes 3-5 , which have been proposed as a basis for topologically protected quantum information processors 6,7 . To ensure topological protection, methods for growing disorder-free 'hard-gap' SE/SU epitaxial hybrids were developed 8-10 . These materials utilise bottom-up crystal growth of InAs nanowires with uniform epitaxial aluminium coatings, an approach which has been extended to high mobility two-dimensional systems 11,12 and selective area grown networks 13,14 . The success of epitaxial InAs/Al hybrids lies in the ability to realise important device classes such as normal metal spectroscopic devices, 5,9,11,12 Josephson Junctions 15-18 for gate-controlled transmon qubits 19,20 , and superconducting Majorana islands 21-23 , using top-down processing to selectively remove the Al. A limitation of this method is that relying on post-process etching inherently limits materials choice. For instance, despite strong incentives to utilise technologically important superconductors such as Nb 24 and NbTiN 25 -which exhibit higher transition temperatures, critical magnetic fields and superconducting energy gaps -selectively removing Nb from InAs remains an unsolved problem. Similarly, InSb is an attractive semiconductor due to its high mobility, g-factor and strong spin-orbit coupling 25-28 . Yet, selectively removing even aluminum from InSb without damage is impossible with known methods. Thus, most potential improvements in epitaxial SE/SU technology are predicated on developing a materials-independent method for device fabrication. An attractive approach to eliminate etching is to employ an in-situ 'shadow approach' to mask specific segments along the NW from supe...