Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

Abstract

In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III–V semiconductors on silicon.

Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms

“…The native oxide in the apertures of the substrates was removed in a HF solution (5%) for 15 s before growth. 1 × 1 cm sized samples were then loaded in a custom-designed HVPE reactor that is described in refs − .GaCl and InCl vapor species are used as the group III precursor. AsH 3 is used as the group V precursor.…”

“…Hence, NWs become longer as we get closer to a pure InAs composition. The growth temperature of 690 °C is too low for the deposition of the GaAs material by HVPE, , which explains the short length of Ga-rich NWs due to a low decomposition efficiency of GaCl compared to InCl. The effect may be enhanced by In adatoms, which diffuse less on the sidewall facets in the presence of Ga adatoms.…”

“…The chloride precursors involved in HVPE ensure a very high selectivity on masked substrates due to their low sticking coefficient on the dielectric mask . Both GaAs and InAs NW growth have been achieved by SAG-HVPE either on GaAs(111)B or Si(111) substrates. − However, HVPE growth of InGaAs NWs on Si has not been achieved so far. Consequently, here, we study the SAG process of InGaAs ternary NWs on Si(111) substrates by HVPE and demonstrate the widely tunable and spatially uniform composition of such NWs.…”

Characteristics and Applicability Analysis of Nanomorphological Structures for Chemosensors: A Systematic Review

“…Research materials related to nanowires include nanowire Ni−Pd mixed-metal complexes, GaAs nanowires, Ta/InAs nanowires, Cu nanowires, silver nanowires, Ag-Doped CuV 2 O 6 nanowires, etc. [33][34][35][36][37][38]. A systematization of nanowire journals with bibliographic sources is listed in Table 3.…”

Long indium-rich InGaAs nanowires by SAG-HVPE

“…Using III-chloride and V-hydride precursors, HVPE has been proven to be a powerful tool to grow III-V materials. Thanks to the low sticking coefficient of the III-chloride precursors on dielectric masks [21], SAG with high selectivity has successfully used to grow binary GaAs and InAs on both GaAs (111)B and Si (111) substrates [22][23][24]. Here, we study the features of SAG of InGaAs NWs using SiO x patterned GaAs (111)B substrate by HVPE.…”