Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy

Yamazaki, Yoshiki; Chang, Jae-Soo; Cho, M.W; Sekiguchi, Takashi; Yao, Takafumi

doi:10.1016/s0022-0248(00)00082-8

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…1 the etched chip is used to grow ZnSe epilayers on a specific region of the chip surface using a patterned SiO 2 layer as a mask. Monocrystalline and polycrystalline ZnSe films grown on bare GaAs substrates and SiO 2 mask layers, respectively, have been reported [17], [18]. The chip is coated with 0.5-μm-thick SiO 2 using an RF sputter system.…”

Section: Methodsmentioning

confidence: 99%

Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

Chen

Chang

2008

IEEE Electron Device Lett.

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The monolithic integration of a ZnSe metalsemiconductor-metal photodiode and an InGaP/GaAs heterojunction bipolar transistor has been achieved successfully on a GaAs substrate. As a result of a current amplification ratio of 20.8, the present monolithic photoreceiver illuminated at an optical input-power intensity of 10 μW has shown high voltage amplification sensitivity of −29.6 mV/μW. The fabrication process and characterization for the integrated device will be useful for the development of wide-bandgap-based short-wavelength optoelectronic integrated circuits in the future. Index Terms-Heterojunction bipolar transistors (HBT),InGaP, metal-semiconductor-metal (MSM), photoreceiver, ZnSe.

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Section: Methodsmentioning

confidence: 99%

Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

Chen

Chang

2008

IEEE Electron Device Lett.

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“…MOCVD SAE has been demonstrated for most of the III-V and II-VI semiconductors including GaAs, 1,2 GaN, 3 InAs, 4 and ZnSe. 5 This ability to laterally pattern III-V and II-VI semiconductors in a single growth step has led to advances in microelectronics, 6,7 optoelectronics, 8 and photonics 9 technology. In MOCVD of III-V and II-VI semiconductors, selectivity is typically achieved by applying oxide or nitride masks that force SAE on exposed semiconductor regions.…”

Section: Introductionmentioning

confidence: 99%

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

et al. 2015

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Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgOjj(0001) GaN crystallographic relationship. Better than 3 lm lateral resolution for the selective area growth of MgO on GaN is demonstrated.

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“…Several techniques (r.f. magnetron sputtering [3], electron beam evaporation [4], chemical vapor deposition [ 5], molecular beam epitaxy [6]) have been applied since then in the growth of ZnSe thin films. However, large area -low temperature (25-60 o C) chemical bath deposition [1] - [2] has been most profitably used and, recently, electrodeposition has attached a lot of attention.…”

Section: Introductionmentioning

confidence: 99%

Cathodic Deposition of ZnSe on Copper Substrates

Panagopoulos¹,

Tsoutsouva²,

Chaidouti³

et al. 2010

ECS Trans.

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In this work, ZnSe thin films were cathodically electrodeposited on copper (Cu) substrates from aqueous solutions of ZnSO 4 and SeO 2 using a three electrode configuration. Cyclic voltampèrometry has been applied to determine the deposition potential range. The deposited films were composed of polycrystalline cubic ZnSe (111) and elemental selenium. The highest zinc content was observed on films deposited at E=−0.6 V vs SCE. The Zn:Se atomic percentage obtained by EDAX approached 1:1 after annealing at 250 o C for 30 min. The films were found to have 44 nm lowest surface roughness and 15% highest reflectance. The results of this study suggest that the electrodeposited ZnSe films are suitable for applications in photovoltaic technology.

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Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy

Cited by 6 publications

References 11 publications

Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Cathodic Deposition of ZnSe on Copper Substrates

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