Selective-area MOVPE growth for 10Gbit/s electroabsorption modulator integrated with a tunable DBR laser

InP-based photonic circuits: Comparison of monolithic integration techniques

“…PL measurements indicate transition energies corresponding to a wavelength of 1.557, 1.503, and 1.442 mm with PL FWHM of less than 43 meV. The electro-absorption modulator-integrated laser shows a good performance including a low threshold current of below 6 mA, an output power of 7 dBm (at 65 mA) and a 3-dB modulation bandwidth of more than 11 GHz [58].…”

“…Using this technique Kim et al [58] have demonstrated the integration of a DBR-laser with an electro-absorption (EA) modulator. Here three distinct regions with different transition energies were used for the active, tuning, and modulator regions of the device.…”

“…Depending on the ridge width and the etch depth for the waveguide this effect will introduce 2-4 dB/cm additional loss. The solution to this problem is to suppress the Zn-diffusion, which can be done by doping the n-type layer high enough with Silicon [58,59] . The level of Si-doping should be slightly higher than the grown p-doping level, because Si not only suppresses the diffusion of Zn, the slightly higher Si-concentration also prevents the conversion of the doping type.…”