Selective Atomic Layer Deposition of Titanium Oxide on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

Park, Mi H.; Jang, Young Jin; Sung-Suh, Hyung Mi; Sung, Myung Mo

doi:10.1021/la035760c

Cited by 141 publications

(148 citation statements)

References 20 publications

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“…We proposed direct SSD of amorphous TiO 2 thin films using hydrolysis, 36a,36b, 154,[192][193][194] amorphous Ta 2 O 5 thin films using hydrolysis, 181 amorphous SnO 2 thin films using hydrolysis, 163,168,195 amorphous TiO 2 thin films using a peroxotitanate complex deposition (PCD), 122b,122c and amorphous SrTiO 3 thin films 40a,40b,196-198 (Figure 11a). A patterned SAM of octadecyltrichlorosilane (OTS) which has silanol groups and octadecyl groups was used as a template for the patterning of amorphous TiO 2 thin films.…”

Section: Micropatterning Of Inorganic Thinmentioning

confidence: 99%

Nano/Micro Patterning of Inorganic Thin Films

Koumoto¹,

Saito²,

Gao³

et al. 2008

Bulletin of the Chemical Society of Japan

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The present review is focused on the site-selective deposition of inorganic thin films on self-assembled monolayer (SAM) templates. SAMs were used to modify the substrate surface with chemical functional groups. The patterned SAM substrate was prepared by exposing the SAM substrate to UV light through photomasks for photocleavage. The patterned SAM was used as the templates for deposition of ceramic thin films in aqueous solutions. The preparation and characterization methods of SAMs, and the preparation of the patterned SAM templates are explained. Solution chemistry for the deposition of ceramic oxides and the physics and chemistry of interfaces are described. Experimental examples are given to explain how these aspects influence the formation of films and their properties. Various examples of site-selective deposition of ceramic oxides on SAM templates are explained with classification into three categories: patterning by site-selective attachment of homogeneously nucleated particles, patterning by surface-selective heterogeneous nucleation and growth, and patterning by catalyst-induced heterogeneous nucleation. We also describe pattern-deposition on flexible substrates and future views to improve the pattern resolution.

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Section: Micropatterning Of Inorganic Thinmentioning

confidence: 99%

Nano/Micro Patterning of Inorganic Thin Films

Koumoto¹,

Saito²,

Gao³

et al. 2008

Bulletin of the Chemical Society of Japan

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“…Previously, SAMs have been studied mostly for selective-area ALD of oxides. [5,6] Selective-area ALD of ruthenium [7] has also been reported. Noble metals are particularly important for selective-area ALD.…”

mentioning

confidence: 95%

Self‐Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective‐Area Atomic Layer Deposition of Iridium

Färm¹,

Kemell²,

Ritala³

et al. 2006

Chemical Vapor Deposition

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Atomic layer deposition (ALD) [1,2] is an excellent tool for atomic-level materials engineering. In ALD, a thin film is grown in a self-limiting manner through surface reactions between alternately supplied gaseous precursors. The ALD technique enables variation of the film composition with atomic-layer accuracy. However, this accuracy is only limited naturally in the growth direction, i.e., perpendicular to the substrate surface. With selective-area ALD, the film growth could also be controlled on the surface, i.e., the film would be deposited only where needed, thereby allowing the preparation of 3D nano-and microstructures. Selective-area ALD can be attempted with patterned self-assembled monolayers (SAMs) that form spontaneously from liquid or gas phases. [3,4] The function of the SAM is to passivate the surface and thereby prevent the growth of a thin film. Previously, SAMs have been studied mostly for selective-area ALD of oxides. [5,6] Selective-area ALD of ruthenium [7] has also been reported. Noble metals are particularly important for selective-area ALD. Because noble metals are difficult to etch, selective-area ALD would enable the preparation of 3D structures that are otherwise difficult to prepare. Selective-area ALD requires high-quality SAMs patterned in a controlled manner. Patterning can be performed by various methods, e.g., by destroying the monolayer through a mask with energetic beams such as ions, electrons, and protons.[8] Scanning-probe-based lithography techniques, such as atomic force microscopy (AFM) and scanning tunneling microscopy (STM), also destroy the monolayer, and the patterning resolution can approach the molecular scale.[8] Patterning with soft lithography, e.g., microcontact printing, [7,9,10] is a fast way to form a patterned SAM all at once. In this report, we will demonstrate a preparation method for a passivating and patterned octadecyltrimethoxysilane (CH 3 (CH 2 ) 17 Si(OCH 3 ) 3 , ODS) SAM for prevention of the iridium ALD process at 225°C with Ir(acac) 3 and O 2 as precursors. SAMs were patterned using a lift-off process [11] with aluminum as a mask layer: first, aluminum was evaporated through a shadow mask, then an ODS SAM was formed from the gas phase, and finally aluminum was removed by etching. With this method micrometer-scale patterns were achieved. The method was chosen because of its simplicity, which allowed us to concentrate on studying the optimum deposition of SAMs for complete passivation of the surface. To our knowledge this is the first time that iridium has been grown by selective-area ALD using a patterned SAM.Successful selective-area ALD requires complete passivation which, in turn, requires SAMs to have complete coverage with no defects that could serve as nucleation sites. Therefore, two methods for preparing SAMs from the gas phase were compared -preparation either with alternate water exposure or without it. In the normal process, the substrate is exposed only to ODS vapor. In the alternative process, water-vapor pulses were given alternately w...

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“…For example, they have been used for selective deposition of thin films, soft lithography, molecular electronics, the control of the wetting and friction behaviors, molecular electronics, and the protection of surfaces against corrosive environment. [12][13][14] Especially, SAMs have been frequently used for controlling the wetting behavior of polya͒ Author to whom correspondence should be addressed. Electronic mail: hyungjun@postech.ac.kr mers on various surfaces.…”

Section: Introductionmentioning

confidence: 99%

Hybrid nanofabrication processes utilizing diblock copolymer nanotemplate prepared by self-assembled monolayer based surface neutralization

Kim

Maeng

Lee

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nanostructures including nanohole and metal dot arrays were fabricated by hybrid processes combing self-assembled diblock copolymer and conventional semiconductor processes. The interfacial energy between polystyrene-b-polymethylmetacrylate ͑PS-b-PMMA͒ diblock copolymer and substrate surface was controlled by employing a self-assembled monolayer ͑SAM͒, resulting in a polymer template with well-ordered cylindrical nanohole array. The nanohole sizes were controlled within 10 to 22 nm in diameter using block copolymers with different molecular weights. The PS nanotemplates were fabricated on various substrates, including oxides, nitrides, and poly-Si. Nanohole pattern was transferred by dry etching process, producing inorganic nanohole templates. Also, gold nanodot arrays with diameter smaller than 10 nm were fabricated through lift off process.

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Selective Atomic Layer Deposition of Titanium Oxide on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

Cited by 141 publications

References 20 publications

Nano/Micro Patterning of Inorganic Thin Films

Nano/Micro Patterning of Inorganic Thin Films

Self‐Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective‐Area Atomic Layer Deposition of Iridium

Hybrid nanofabrication processes utilizing diblock copolymer nanotemplate prepared by self-assembled monolayer based surface neutralization

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