Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors

Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors

“…In order to calibrate the macroscopic loading effect (i.e. the strong growth rate increase when switching from blanket to patterned wafers [16,23]), we have proceeded with the selective epitaxial growth of nominally 10 nm of Si 0.65 Ge 0.35 or Si 0.53 Ge 0.47 on patterned, thinned down SOI wafers (t Si $10 nm, buried SiO 2 layer thickness $400 nm). A mesa isolation scheme was used for those patterned wafers, with Si openings inside SiO 2 occupying either 4% or 21% of the total wafer surface.…”

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

“…[18] the SiGe loading effects we were faced with on patterned wafers with around 92% of the surface covered by a 250 nm-thick LOCOS (LOCal Oxydation of Silicon)-type thermally grown SiO 2 film. Depending on the Si window area (i.e.…”

“…[16,17] and references therein). The addition of HCl minimizes loading effects, especially for SiGe [17,18] (i.e. the strong increase of the SiGe growth rate and the slight increase of the Ge concentration when switching from a blanket to a dielectric-masked substrate (global loading effect), and when going over from a large-area to a smallarea window of Si in the dielectric-masked substrate (local loading effect).…”

In situ HCl etching of Si for the elaboration of locally misorientated surfaces

“…[17,21,23]), is akin to the global ''loading'' effect observed during the selective epitaxial growth of SiGe on patterned wafers (see Ref. [25]). We are also faced with some local ''loading'' effects, i.e.…”