Selective epitaxial growth of silicon and some potential applications

Generation of Charged Nanoparticles during Synthesis of ZnO Nanowires by Carbothermal Reduction

“…This preferential landing on a conducting area might be related to the selective deposition in CVD widely used in the fabrication of microelectronics (Ginsberg et al 1990;Gao & Edgar 1997). Even after ZnO nanowires start to grow mediated by gold nanoparticles, the charged nanoparticles would land preferentially at the tip, where the gold nanoparticle is placed, over the side of ZnO nanowires.…”

Impact of fin width on digital and analog performances of n-FinFETs

“…By doing so, R S can be reduced without compromising short channel control. This is achieved using selective epitaxial growth (SEG) technology [17], where a layer of Si is grown selectively on the source and drain regions. The impact of SEG is seen by comparing the above results (in which no SEG was used) with results from a wafer which used Si selectively on the S/D regions.…”

Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials

“…Madar's calculations illustrate the status of this field, where thermodynamic analysis is noteworthy in understanding and optimizing the SEG process . The use of Si SEG in fabricating novel devices has been reviewed by Ginsberg and co-workers, who used the basic SiCl 4 + H 2 chemistry of reactions 3 and 4, illustrated in Figure . The precursor SiCl 2 H 2 is also used, and both H 2 and HCl can be added to the reactant gas, with the partial pressures adjusted to optimize selectivity.

6 Important concepts in area selective CVD of Si: (A) Using SiCl 4 as an example precursor, the deposition pathway uses reaction with the H 2 coreactant to form HCl and Si film.

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