Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H 2 O 2 solution

Kuźmicz, Aleksandr; Chmielewski, Krzysztof; Serebrennikova, O. Yu.; Muszalski, J.

doi:10.1016/j.mssp.2017.01.020

Cited by 5 publications

(5 citation statements)

References 21 publications

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“…At a nanohole fabrication temperature of 635 °C, the presence of facets along the inner wall may result in stacking faults and enhance the etching rate. 36,38,39 The appearance of the hillock peak-B further verifies the existence of multiangle facets on the sidewall near the nanohole opening.…”

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confidence: 88%

“…Selective wet etching can complement and thus compensate limitation of AFM and TEM, which can only perform two-dimensional characterization. Etch rate increases around the defect sites, such as dislocations or stacking faults, and causes etch pit formation. − In combination with AFM, the 3D alloy composition and distribution of In(Ga)As and SiGe QDs has been successfully obtained, while the composition distributions and conductance distributions of GeSi quantum rings have been detected. This method provides a fast, intuitive, and controllable way to study the QD morphology.…”

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confidence: 99%

“…To further confirm the 3D morphology features of DENI QDs, we performed a selective chemical etching procedure (Supporting Information). Citric acid and hydrogen peroxide can be used for selective etching of GaAs through an oxidation–reduction reaction, known for its high selectivity to GaAs over AlAs . However, the selectivity to AlGaAs can reach up to 100 depending on the Al concentration, with slight modifications to etchant ratios causing substantial changes.…”

mentioning

confidence: 99%

“…Third, the surface of the sample becomes rougher after the sixth and seventh etching cycles. Only elliptical platform imprints are present due to the combination of deposited GaAs with surface AlAs, forming Al y Ga 1– y As with high Al content around the nanoring, and the simultaneous generation of Al 2 O 3 byproducts, which prevent etching. The ring-shaped wall surrounding the hole opening is not discernible, as shown in Figures f and g.…”

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confidence: 99%

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Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Zhang,

Grünewald,

Cao

et al. 2024

Nano Lett.

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Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ highresolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental threedimensional structural model for simulating and optimizing their optoelectronic properties.

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confidence: 88%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Zhang,

Grünewald,

Cao

et al. 2024

Nano Lett.

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“…In the first step, a thick photoresist is deposited on the sample surface leaving an exposed edge around the sample perimeter. The photoresist is used to protect [17]. CA is once again used to etch the GaAs contact layer and stops at layer 4.…”

Section: Processing Of Thin Film Gaas Solar Cellsmentioning

confidence: 99%

Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Paulauskas

Strazdienė

Šebeka

et al. 2023

Semicond. Sci. Technol.

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The epitaxial GaAs substrate lift-off (ELO) technique is widely used to produce thin film III-V semiconductor optoelectronic devices. However, the HF acid used in this process forbids the incorporation of active AlGaAs device layers with high Al content due to its selective etching. In this work, a new ELO method is presented, which allows for the protection of AlGaAs layers against the HF acid attack. The method is used here to prepare thin film GaAs solar cells containing Al0.85Ga0.15As window layer. We employ a sacrificial GaAs buffer and device perimeter pre-processing that coves the exposed edges with back contact metals and electroplated Cu. A comparison of the epitaxially lifted GaAs solar cells with identical cells prepared by substrate etching demonstrates identical photovoltaic figures of merit and confirms the viability of the AlGaAs protection approach. In addition to applications in thin film photovoltaics, this ELO method can be applied to solid-state lasers and single-photon emitters employing AlGaAs-based Bragg reflectors, among other III-V semiconductor optoelectronic devices.

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Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching

et al. 2021

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Various experimental approaches of the wet nanoscale treatment have been proposed to account for features of the InAs, InSb and GaAs, GaSb semiconductor dissolution process in the (NH4)2Cr2O7–HBr–EG etching solution. Etching kinetics data showed that a crystal dissolution has diffusion-determined nature. The lowering of the solvent concentration from 80 to 0 vol.% in the solution was accompanied by a significant increase in the semiconductor etching speed. Depending on the solution composition, we have studied two types of crystal surface morphology, polished and passivated by the film, which was formed after chemical-dynamic (CDP) and/or chemical-mechanic polishing (CMP) in the solution, saturated by solvent and by oxidant, accordingly. It was found that in the polished etchants both CDP and CMP procedures lead to the formation of the mirror-like and super-smooth surface with nanoscale roughness less than 1 nm. The obtained results of surface state indicate that the (NH4)2Cr2O7–HBr–EG etchants could be used successfully for controllable CDP and CMP treatment of III–V semiconductors and formation of super-smooth surface.

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Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H 2 O 2 solution

Cited by 5 publications

References 21 publications

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching

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