Selective fabrication of n‐ and p‐type SnO films without doping

Abstract

Undoped n‐ and p‐type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria‐stabilized zirconia (YSZ) substrates with out‐of‐plane and in‐plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n‐type film. The growth at increased oxygen partial pressure yields p‐type films, demonstrating the selective fabrication of both n‐ and p‐type SnO films without doping. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Lone-Pair Stabilization in Transparent Amorphous Tin Oxides: A Potential Route to p-Type Conduction Pathways

“…Most films grown at 575°C on YSZ display peaks attributable to crystalline SnO, however, the degree of crystallinity is highly dependent on the oxygen partial pressure during deposition. 28 The tuning of structural disorder from highly crystalline to fully amorphous is shown by the normalized SnO (002) peaks in Figure 1 (b). Increasing broadening of the SnO diffraction peaks from samples A to C is observed, indicating a decrease in crystallite size/crystalline quality with increasing oxygen partial pressure.…”

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

“…Fabrication of SnO thin films has been extensively evaluated using a series of methods, including physical vapor deposition (PVD) routes, such as PLD, EB, RFMS, and DCMS using Sn, SnO, and SnO 2 targets on both rigid and flexible substrates. The Hall mobility and carrier (hole) concentrations, along with the deposition conditions are listed in Table 3 for relatively recent studies.…”

“…The Seebeck measurement was also used to detect the majority charge‐carrier type in SnO thin films. Rather large Seebeck coefficients ( S ) were reported: +1.99 mV K −1 by Ogo et al, +479 μV K −1 by Hosono et al, +763 μV K −1 by Hayashi et al, and +1.69 mV K −1 by Jiang et al This variation is likely due to the differences in carrier concentration and the variation in band structure originates from different deposition methods, film crystalline quality and orientations.…”

Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction

“…Tin monoxide (SnO) layer around 250 nm was evaporated onto ITO‐glass by using electron beam evaporator at room temperature, followed by rapid annealing at 350 °C for 10 min under Ar ambient, in order to improve its electro‐optical characteristics, as mentioned in Figure S5 in the Supporting Information. Since, p‐SnO is thermodynamically unstable phase, which can easily be transformed into n‐SnO 2 at further higher temperature . The growth of ZSN film about 300 nm in thickness was carried out via dc‐magnetron sputtering at room temperature.…”

“…Since, p-SnO is thermodynamically unstable phase, which can easily be transformed into n-SnO 2 at further higher temperature. [14] The growth of ZSN film about 300 nm in thickness was carried out via dc-magnetron sputtering at room temperature. Crosssectional SEM image of the fabricated device was displayed in the inset of Figure 2(a).…”