Selective gas detection using CNTFET arrays fabricated using air-brush technique, with different metal as electrodes

Bondavalli, Paolo; Gorintin, Louis; Feugnet, Gilles; Lehoucq, Gaëlle; Pribat, Didier

doi:10.1016/j.snb.2014.06.064

Cited by 24 publications

(15 citation statements)

References 17 publications

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“…The interaction of gases with the CNT was interpreted as strictly connected to charge transfers leading to doping effects. However, some years later it was highlighted by different studies that the main effect, for channels shorter than 100 μm, was mainly on the work function of the metal contacts, which was shifted by the adsorbtion of the gas molecules [5][6][7][8][9]. This was the main raison for the change of the transfer characteristics (drain-source current as function of the gate voltage) of the CNTFETs.…”

Section: Cntfets Gas Sensorsmentioning

confidence: 99%

“…Change of the I DS current (D and S, respectively stand for drain and source) for transistors with different metal contacts as a function of time for V GS =−16 V (G stands for Gate) and V DS =1.6 V for concentrations between 10 ppb and 10 ppm of NH 3 and between 100 ppb and 1 ppm of NO 2 6 . Reprinted from[6], copyright © 2014 Elsevier B.V. All rights reserved.…”

mentioning

confidence: 99%

“…(a) Chip containing 16 CNTFETs fabricated using four different metals as electrodes (four for each metals), (b) chip dimensions compared to a 20 cents coin, (c) chip mounted on the C-DIL used for tests[6]. Reprinted from[6], copyright © 2014 Elsevier B.V. All rights reserved.…”

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confidence: 99%

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Deposition of graphene and related nanomaterials by dynamic spray-gun method: a new route to implement nanomaterials in real applications

Bondavalli

Pribat

Legagneux³

et al. 2019

J. Phys. Mater.

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The dynamic spray-gun deposition method was developed in 2006 to fabricate field effect transistors based on random arrays of carbon nanotubes (CNTs) field effect transistors for gas sensing applications. Thanks to this deposition method, we were able to fabricate hundreds of operational devices in a reproducible way that were integrated in electronic chips. Following this first implementation, we decided to widen the application of the deposition technique to the field of Energy and specifically to the fabrication of supercapacitors. In this context, we demonstrated in 2012 the fabrication of nanostructured electrodes for supercapacitors, using mixtures of graphene/graphite and CNTs increasing the device capacitance and the power delivered of a factor 2.5 compared to CNT based electrochemical-double-layer-capacitors. Indeed, with high quality graphene we could reach a value of around 100 W Kg −1 . This value is extremely promising also considering that it has been obtained with an industrially suitable technique. This dynamic spray-gun deposition has been also exploited for the fabrication of resistance based random access memories, making use of thin layers of graphene oxide and of oxidized carbon nanofibers. In the first case, 5000 cycles of 'write' and 'read' phases were demonstrated. These results pave the way for the fabrication of very low cost memories that can be embedded in smart-cards, patches for health monitoring (e.g. diabetes), ID cards, RFID tags and more generally smart packaging. Finally we are also working on the utilization of this technique for the fabrication of layers for electro-magnetic interference shielding application. Thanks to a new machine with four nozzles, developed within the frame of the Graphene Flagship project, we are able to deposit four different nanomaterials at the same time or alternatively on a large surface (30 cm×30 cm) creating specific nano-structuration and therefore ad hoc architectures allowing the smart absorption of specific frequencies (e.g. X-band). All these applications demonstrate the extreme versatility of this technique that constitutes a real breakthrough for exploiting the nanomaterials characteristics in real devices, using an industrial suitable fabrication method that can be implemented using roll-to-roll technique.

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Section: Cntfets Gas Sensorsmentioning

confidence: 99%

mentioning

confidence: 99%

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Deposition of graphene and related nanomaterials by dynamic spray-gun method: a new route to implement nanomaterials in real applications

Bondavalli

Pribat

Legagneux³

et al. 2019

J. Phys. Mater.

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“…Depending upon the density of the CNT mats used for performing detection, the charge transfer leads to changes in the conductance of the CNT network. This is the key sensing mechanism for CNT gas sensors [ 43 , 44 ]. CNTs are of two types: single-walled (SWNTs) and multi-walled (MWNTs).…”

Section: Introductionmentioning

confidence: 99%

A Review of Inkjet Printed Graphene and Carbon Nanotubes Based Gas Sensors

Pandhi

Chandnani

Subbaraman

et al. 2020

Sensors

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Graphene and carbon nanotube (CNT)-based gas/vapor sensors have gained much traction for numerous applications over the last decade due to their excellent sensing performance at ambient conditions. Inkjet printing various forms of graphene (reduced graphene oxide or modified graphene) and CNT (single-wall nanotubes (SWNTs) or multiwall nanotubes (MWNTs)) nanomaterials allows fabrication onto flexible substrates which enable gas sensing applications in flexible electronics. This review focuses on their recent developments and provides an overview of the state-of-the-art in inkjet printing of graphene and CNT based sensors targeting gases, such as NO2, Cl2, CO2, NH3, and organic vapors. Moreover, this review presents the current enhancements and challenges of printing CNT and graphene-based gas/vapor sensors, the role of defects, and advanced printing techniques using these nanomaterials, while highlighting challenges in reliability and reproducibility. The future potential and outlook of this rapidly growing research are analyzed as well.

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“…In the realm of nanostructured media, Schottky contacts have been formed with GaN nanowires, 14 ZnO nanorods, 15 InP nanoneedles, 16 and semiconducting carbon nanotubes. 17,18 The Schottky barrier (SB) interface itself has been the focus of much experimentation with the electrical properties frequently characterized in terms of plots of current against voltage (as a function of temperature), I-V(-T), and capacitance versus voltage, C-V. The SB height is a primary characterization parameter and its modification for a given metal/ semiconductor combination has been studied as a function of the semiconductor surface treatment prior to metal deposition, 19 delta-doping at the semiconductor surface, 20 the method of metal deposition, 21 the presence of molecular species at the Schottky interface, 22,23 and even post-fabrication ion implanting and drive-in annealing.…”

Section: Introductionmentioning

confidence: 99%

An alternative methodology in Schottky diode physics

Mitra

Feng

Penate-Quesada³

et al. 2015

Journal of Applied Physics

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The fabrication and electrical characterization of Schottky junction diodes have been extensively researched for three-quarters of a century since the original work of Schottky in 1938. This study breaks from the highly standardized regime of such research and provides an alternative methodology that prompts novel, more efficient applications of the adroit Schottky junction in areas such as chemical and thermal sensing. The core departure from standard Schottky diode configuration is that the metal electrode is of comparable or higher resistance than the underlying semiconductor. Further, complete electrical characterization is accomplished through recording four-probe resistance-temperature (R D -T) characteristics of the device, where electrical sourcing and sensing is done only via the metal electrode and not directly through the semiconductor. Importantly, this results in probing a nominally unbiased junction while eliminating the need for an Ohmic contact to the semiconductor. The characteristic R D -T plot shows two distinct regions of high (metal) and low (semiconductor) resistances at low and high temperatures, respectively, connected by a crossover region of width, DT, within which there is a large negative temperature coefficient of resistance. The R D -T characteristic is highly sensitive to the Schottky barrier height; consequently, at a fixed temperature, R D responds appreciably to small changes in barrier height such as that induced by absorption of a chemical species (e.g., H 2 ) at the interface. A theoretical model is developed to simulate the R D -T data and applied to Pd/p-Si and Pt/p-Si Schottky diodes with a range of metal electrode resistance. The analysis gives near-perfect fits to the experimental R D -T characteristics, yielding the junction properties as fit parameters. The modelling not only helps elucidate the underlying physics but also helps to comprehend the parameter space essential for the discussed applications. Although the primary regime of application is limited to a relatively narrow range (DT) for a given type of diode, the alternative methodology is of universal applicability to all metalsemiconductor combinations forming Schottky contacts. V C 2015 AIP Publishing LLC.

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Selective gas detection using CNTFET arrays fabricated using air-brush technique, with different metal as electrodes

Cited by 24 publications

References 17 publications

Deposition of graphene and related nanomaterials by dynamic spray-gun method: a new route to implement nanomaterials in real applications

Deposition of graphene and related nanomaterials by dynamic spray-gun method: a new route to implement nanomaterials in real applications

A Review of Inkjet Printed Graphene and Carbon Nanotubes Based Gas Sensors

An alternative methodology in Schottky diode physics

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