Selective Growth of Diamond in Thermal Vias for GaN HEMTs

Poust, Benjamin; Gambin, Vincent; Sandhu, Rajinder; Smorchkova, I.; Lewis, Gregory D.; Elmadjian, R.; Li, Danny H.W.; Geiger, Craig; Heying, B.; Wójtowicz, M.; Oki, A.K.; Pate, Bradford B.; Feygelson, Tatyana I.; Hobart, Karl D.

doi:10.1109/csics.2013.6659244

Cited by 15 publications

(4 citation statements)

References 2 publications

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“…Synthetic diamond is deposited using chemical vapor deposition (Seki 2.45 GHz with microwave plasma immersion) to line microcavities in the SiC beneath the HEMT [30] to provide a low resistance thermal conduit from the device to fluid interface as shown in figure 5. Coolant is supplied from a fixture into a micro-machined manifold inlet.…”

Section: Near Junction Coolingmentioning

confidence: 99%

Integrated nanomaterials for extreme thermal management: a perspective for aerospace applications

Barako

Gambin²,

Tice³

2018

Nanotechnology

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Nanomaterials will play a disruptive role in next-generation thermal management for high power electronics in aerospace platforms. These high power and high frequency devices have been experiencing a paradigm shift toward designs that favor extreme integration and compaction. The reduction in form factor amplifies the intensity of the thermal loads and imposes extreme requirements on the thermal management architecture for reliable operation. In this perspective, we introduce the opportunities and challenges enabled by rationally integrating nanomaterials along the entire thermal resistance chain, beginning at the high heat flux source up to the system-level heat rejection. Using gallium nitride radio frequency devices as a case study, we employ a combination of viewpoints comprised of original research, academic literature, and industry adoption of emerging nanotechnologies being used to construct advanced thermal management architectures. We consider the benefits and challenges for nanomaterials along the entire thermal pathway from synthetic diamond and on-chip microfluidics at the heat source to vertically-aligned copper nanowires and nanoporous media along the heat rejection pathway. We then propose a vision for a materials-by-design approach to the rational engineering of complex nanostructures to achieve tunable property combinations on demand. These strategies offer a snapshot of the opportunities enabled by the rational design of nanomaterials to mitigate thermal constraints and approach the limits of performance in complex aerospace electronics.

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Section: Near Junction Coolingmentioning

confidence: 99%

Integrated nanomaterials for extreme thermal management: a perspective for aerospace applications

Barako

Gambin²,

Tice³

2018

Nanotechnology

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“…The wafer is then seeded with nano-diamond particles and a thin, conformal, nucleation layer is grown. The backside diamond is then etched from all regions except the thermal vias and an additional CVD diamond deposition is completed to further fi II the thermal vias [26], with a projected 3.1 x improvement in RF output power per unit area while maintaining similar junction temperatures as the baseline GaN-on-SiC HEMT. Through effort within NJTT, a process to deposit diamond within thermal vias was developed, with future electrical and thermal characterization the subject of the DARPA ICECool and the DARPA Diamond Round Robin programs.…”

Section: Diamond Grown In Viasmentioning

confidence: 99%

Near-junction microfluidic thermal management of RF power amplifiers

Bar‐Cohen

Maurer

Sivananthan

2015

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

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While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research focused on reduction of near-junction thermal resistance through use of diamond substrates and convective and evaporative microfluidics. The options, challenges, and techniques associated with the development of this embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power am plifiers.

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“…15 With the diamond-filled thermal via , the rise in the junction temperature of the GaN high-electron-mobility transistor could be suppressed by >30%. 16 In this study, through-vias were formed in the β-Ga 2 O 3 substrate using ultraviolet (UV) laser drilling, and the inner parts were subsequently filled with highly thermally conductive Cu (400 W m −1 K −1 ) using electroplating. 17 The use of high-energy UV laser drilling offers numerous advantages such as high etch rates, high-aspect ratios, and mask-less patterning.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of heat dissipation in β-Ga₂O₃ Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations

You,

Eom,

Park

et al. 2024

J. Mater. Chem. C

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Selective Growth of Diamond in Thermal Vias for GaN HEMTs

Cited by 15 publications

References 2 publications

Integrated nanomaterials for extreme thermal management: a perspective for aerospace applications

Integrated nanomaterials for extreme thermal management: a perspective for aerospace applications

Near-junction microfluidic thermal management of RF power amplifiers

Enhancement of heat dissipation in β-Ga₂O₃ Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations

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Selective Growth of Diamond in Thermal Vias for GaN HEMTs

Cited by 15 publications

References 2 publications

Integrated nanomaterials for extreme thermal management: a perspective for aerospace applications

Integrated nanomaterials for extreme thermal management: a perspective for aerospace applications

Near-junction microfluidic thermal management of RF power amplifiers

Enhancement of heat dissipation in β-Ga2O3 Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations

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Product

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Enhancement of heat dissipation in β-Ga₂O₃ Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations