Selective Laser Ablation in Resists and Block Copolymers for High Resolution Lithographic Patterning

Olynick, Deirdre L.; Perera, Pradeep N.; Schwartzberg, Adam; Kulshreshta, Prashant; Oteyza, Dimas G. de; Jarnagin, Nathan D.; Henderson, Cliff; Sun, Zhiwei; Gunkel, Ilja; Budden, Matthias; Rangelow, Ivo W.

doi:10.2494/photopolymer.28.663

Cited by 4 publications

(3 citation statements)

References 19 publications

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“…Thus, depending on the thickness of the resist, a minimum bias voltage has to be applied to prevent mechanical tip-resist interactions. (iv) Since the tip-surface distance is significantly smaller than the mean free path (MFP) of the electrons in ambient conditions (~340-570 nm [63][64][65][66]), vacuum conditions are not required. (v) The application of low energy electrons < 100 eV, which enlarge the de Broglie wavelength (30 eV → 0.224 nm vs. 30 keV → 0.007 nm), do not affect resolution in lithographic applications.…”

Section: The Principle Of Exposure With Low-energy Electrons Using a ...mentioning

confidence: 99%

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Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Kaestner

Rangelow

2020

Int. J. Extrem. Manuf.

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Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.

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Section: The Principle Of Exposure With Low-energy Electrons Using a ...mentioning

confidence: 99%

“…Figure 16 shows a positive tone exposure at ambient conditions. The role of OH groups is evident [63]. Exposures in a vacuum induces negative tone behavior, which requires a wet development step.…”

Section: Influence Of the Environmentmentioning

confidence: 99%

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Kaestner

Rangelow

2020

Int. J. Extrem. Manuf.

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“…Furthermore, the modification of the phenolic group to introduce metal or oxide precursors can result in a robust hard mask that can be used for subsequent pattern transfer to the underlying substrate. By utilizing protected or deprotected phenol groups, a variety of nanopatterning strategies that combine top-down and bottom-up approaches are possible. , For example, Du et al demonstrated photo-cross-linking P(4HS) block in phase-separated P(4HS- b -α-methylstyrene) thin film with multifunctional cross-linkers resulting in a negative tone photoresist . Hence, 4HS here not only drives phase segregation due to its high polarity, but also undergoes a photochemical reaction, leading to a patternable BCP.…”

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Isomeric Effect Enabled Thermally Driven Self-Assembly of Hydroxystyrene-Based Block Copolymers

Kanimozhi¹,

Kim

Larson³

et al. 2016

ACS Macro Lett.

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We demonstrate through isomeric effect the modulation of thermal properties of poly(hydroxystyrene) (PHS)-based block copolymers (BCPs). A minimal structural change of substituting 3HS for 4HS in the BCP results in a drastic decrease in T g , which in turn enables the thin film assembly of the BCP via thermal annealing. We synthesized a series of poly(3-hydroxystyrene-b-tert-butylstyrene) [P(3HS-b-tBuSt)] and poly(4-hydroxystyrene-b-tert-butylstyrene) [P(4HS-b-tBuSt)] BCPs by sequential anionic polymerization of protected 3HS/4HS monomer and tBuSt followed by deprotection. Measured T g of P(3HS) was ∼20−30°C lower than P(4HS) of comparable molecular weights. As a result, thermally driven self-assembly of P(3HS-b-tBuSt) BCPs in both bulk and thin film is demonstrated. For P(4HS-btBuSt) thermal annealing in thin-film at high temperatures results in poorly developed morphology due to cross-linking reaction of the 4HS block. The smallest periodicity observed for P(3HS-b-tBuSt) was 8.8 nm in lamellar and 11.5 nm in cylindrical morphologies. The functionality of the 3HS block was exploited to incorporate vapor phase metal oxide precursors to generate sub-10 nm alumina nanowires. D irecting microphase separation in block copolymer (BCP) thin films to yield highly ordered nanostructures has attracted scientific and technological interest due to its potential to enable rapid, low-cost large-area fabrication of nanoscale features. 1−7 A significant driver, for example, has been in the use of block copolymer lithography for producing bit-patterned media. 8 The minimum feature size (or domain size) is governed principally by the product of the degree of polymerization (N) and the effective interaction parameter (χ eff ) which is a measure of segregation strength between the polymer blocks, with microphase separation occurring for χ eff N > 10.5. 9 In principle, the self-assembly of BCPs can be controlled by adjusting these parameters, resulting in the fabrication of dense arrays of sub-50 nm nanostructures such as spheres, cylinders, and lamellae. 1,3 To achieve the single digit nanometer feature sizes desired for emerging applications, BCPs should be designed with 10 (i) thermodynamically incompatible blocks to yield a large χ eff for phase separation at lower degree of polymerization, 11−13 (ii) thermal properties such as glass transition temperatures suited for low cost industrial processing (e.g., thermal annealing), 14 (iii) large intrinsic etch selectivity between the blocks for pattern transfer, 15,16 or with functionalities that can provide etch contrast by enabling selective sequestration of etch-resistant materials, or precursors thereof, 17−19 and (iv) controlled molecular weights and narrow dispersity afforded through high-yielding polymerization method from readily accessible monomers.Poly(hydroxystyrene) (PHS)-based polymers are widely used resist materials and an easily accessible class of polymers. 20,21 It is a highly polar material relative to polystyrene, for example, as reflected in its high solubility pa...

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Towards fast nanopattern fabrication by local laser annealing of block copolymer (BCP) films

Zimmer

Zajadacz

Frost

et al. 2019

Applied Surface Science

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Selective Laser Ablation in Resists and Block Copolymers for High Resolution Lithographic Patterning

Cited by 4 publications

References 19 publications

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Isomeric Effect Enabled Thermally Driven Self-Assembly of Hydroxystyrene-Based Block Copolymers

Towards fast nanopattern fabrication by local laser annealing of block copolymer (BCP) films

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