Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers

Abstract

This paper presents the first successful application of a selective MOCVD growth to fabrication of a planar buried heterostructure laser diode. Double heterostructure of GaAs/AlGaAs laser was grown at atmospheric pressure, and the second-step selective growth for making a burying AlGaAs semi-insulating layer was carried out at low pressure. Resistivity of the undoped AlGaAs layer, controlled by changing V/III ratio, was more than 107 Ω·cm at V/III=100. The lasing wavelength was 879 nm and the threshold current of CW operation was 20 mA at room temperature.