The epitaxial growth of 0.6[BaTiO 3 ]-0.4[Bi(Mg 2/3 Nb 1/3 )O 3 ] (BT-BMN) relaxor ferroelectric thin-films on (100) Nb doped SrTiO 3 substrates has been achieved and the structure is investigated for high-temperature capacitor applications. The post growth annealing decreases the oxygen vacancy and other defects in BT-BMN films, resulting in the enhancement of dielectric constant. An insertion of intermediate SrRuO 3 layers as an electrode instead of Pt, sandwiching the film, is found to be more effective in enhancing the dielectric constant. A very high dielectric constant exceeding 400 was achieved from high-temperature annealed film and the film showed an excellent dielectric constant stability of below 11% in the temperature range of 80-400°C. This will enable smaller, high-temperature tolerant, monolithically integrated thin-film capacitors on power semiconductor devices.

A novel micromachined silicon displacement sensor based on the conduction of heat between two surfaces through the ambient air is described. A displacement resolution of less than 1 nm and a dynamic range of more than 100 µm was achieved in a 10 kHz bandwidth. To minimize drift, the sensors are operated in pairs, using a differential measurement configuration. The power consumption of these devices is on the order of 10 mW per sensor, and the measured time response is described by a simple exponential with a time constant of approximately 100 µs.

Nonpolar a-plane ZnO-film and n-ZnO/i-ZnO/p-GaN heterostructure LEDs were grown epitaxially by pulsed laser deposition and metal–organic chemical vapor deposition on Si(001) using AlN and MnS as buffer layers. X-ray diffraction pole figures showed an epitaxial relationship of ZnO() ∥ AlN() ∥ MnS(001) ∥ Si(001). A near band-edge emission from ZnO was observed at 378 nm in photoluminescence measurements. Electroluminescence of nonpolar n-ZnO/i-ZnO/p-GaN LEDs displayed UV emission at 390 nm under forward and reverse bias. Successful growth of nonpolar n-ZnO/i-ZnO/p-GaN heteroepitaxial on Si provides an attractive solution for integrating nonpolar ZnO-based optoelectronic devices with Si substrates for various applications.

Combinatorial thin-film of (1−x)[BaTiO3]–x[Bi(Mg2/3Nb1/3)O3] — (BT–BMN) was grown on Pt/Ti/SiO2/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt % enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt % region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25–400 °C range) were obtained.

Epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO 3-Bi(Mg 2/3 Nb 1/3)O 3 (BT-BMN), has been realized on Nb:SrTiO 3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400 C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400 C, breaking the present 175 C limit of bulky capacitors, in high-power hightemperature electronic devices.