Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Kumaragurubaran, Somu; Nagata, Takahiro; Tsunekawa, Yoshifumi; Takahashi, K.; Ri, Shien; Suzuki, Setsu; Chikyow, Toyohiro

doi:10.1016/j.tsf.2015.09.012

Cited by 9 publications

(6 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The full width at half maximum (FWHM) value of the χ angle indicates the mosaicity of films. 24) The surface morphology was observed by atomic force microscope (AFM; Hitachi High-Technologies, AFM5000II). The chemical bonding states were characterized by X-ray photoelectron spectroscopy (XPS; Thermo Scientific, K-Alpha) using a monochromated Al Kα X-ray source (hν = 1486.6 eV) with a total energy resolution of 700 meV.…”

Section: Experimental Methodsmentioning

confidence: 99%

Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering

Tatejima

Nagata

Ishibashi

et al. 2019

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The growth conditions of MnS thin film on a Si (100) substrate deposited by the RF-magnetron sputtering method were investigated. The MnS is a buffer layer for the epitaxial growth of non-polar AlN thin film on the Si (100) substrate. The 4°-off-Si (100) substrate and the insertion of MnS film grown at room temperature (RT-MnS) improved the crystallinity and the surface roughness of the MnS film. In particular, the 20 nm thick RT-MnS showed a reduction of surface roughness of the MnS layer deposited at 550 °C. The root mean square value of the MnS layer was 0.23 nm, which is in the same range as that of the Si substrate. X-ray photoelectron spectroscopy measurements revealed that RT-MnS insertion with a thickness over 10 nm reduced the sulfur vacancy formation in the MnS film deposited on RT-MnS, and the MnS was thermally stable at the growth temperature of AlN.

show abstract

Section: Experimental Methodsmentioning

confidence: 99%

Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering

Tatejima

Nagata

Ishibashi

et al. 2019

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…We have demonstrated the epitaxial growth of BT-BMN thin films on SrTiO 3 substrates. 12,13) However, we found issues of the interface reaction with a Pt electrode and the defect formation of BT-BMN caused by the Bi diffusion into the electrode owing to the high volatility of Bi. These issues are similar to those described in a previous report, 14) and strongly affect the dielectric constant and ferroelectricity.…”

Section: Introductionmentioning

confidence: 91%

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

Nagata

Kumaragurubaran

Tsunekawa

et al. 2016

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3–Bi(Mg2/3Nb1/3)O3 (BT–BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT–BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT–BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT–BMN stack structure is a potential candidate for the high-temperature operational capacitor.

show abstract

“…Dielectric constant temperature stability can be calculated by the following equation (8) where ε max , ε min , and ε RT are the maximum permittivity, the minimum permittivity and the room temperature dielectric constant, respectively. [176] The BFO25-BTO75 thin film has extremely large permittivity stability from ambient temperature to 330 °C, so the film is well suited for high-temperature capacitors. Similarly, the BFO25-STO75 film exhibits a significant relaxed behavior, with a higher dielectric constant than STO100 over the entire test temperature range.…”

Section: Bi-based Compounds To Enhance the Dielectric Properties Of T...mentioning

confidence: 99%

Perovskite Oxide Ferroelectric Thin Films

Tian

Yang

2022

Adv Elect Materials

View full text Add to dashboard Cite

be roughly divided into perovskite-type, lithium niobate type, tungsten bronze type, potassium dihydrogen phosphate type, triglycine sulphate type, Rochelle salt, ferroelectric liquid crystal, and ferroelectric polymer. Among these ferroelectric thin film materials, perovskite ferroelectric films and ferroelectric polymer films are relatively well-studied films. The outstanding ductility and flexibility of ferroelectric polymer films like polyvinylidene fluoride (PVDF) have made them popular in flexible electrical devices. [7][8][9] However, some disadvantages of ferroelectric polymer films, such as low polarization strength, large coercive field, slow switching speed, and poor temperature resistance limit their application in fields including ferroelectric memory, piezoelectric energy harvesting or sensors. [10][11][12] To apply them to these fields, they need to be appropriately combined with perovskite oxide materials to improve their ferroelectric properties. For example, some researchers doped 0.5((Ba 0.7 Ca 0.3 )TiO 3 )-0.5(Ba(Zr 0.2 Ti 0.8 ) O 3 ) (BCZT) ceramic particles into PVDF to make BCZT/PVDF composite film. PVDF is a semicrystalline ferroelectric polymer, doping it with BCZT improves its crystallinity and hence its dielectric constant. The dielectric constants of the γ-PVDF phase and α-PVDF phase in pure PVDF films are ≈10 and 7.5. After doping with BCZT, the dielectric constants increase to 31 and 20, which improves the ferroelectric properties of PVDF. [13] There are many other examples of enhancing the ferroelectric properties of PVDF films by doping with perovskite oxides. [14][15][16][17][18][19][20] Obviously, enhancing the ferroelectric properties of PVDF by this method will make the preparation process relatively tedious and is not conducive to mass production. It is not as convenient as growing perovskite ferroelectric films directly on flexible substrates. In addition, polymers' poor temperature resistance limits their utilization compared to ferroelectric oxide thin film materials' superior temperature resistance and physical properties. The composite dielectric film composed of BiFeO 3 (BFO) and SrTiO 3 (STO) has a reversible energy storage density (U e ) of about 70 J cm −3 at room temperature and can operate stably between −60 and 100 °C. [21] BaZr 0.35 Ti 0.65 O 3 (BZT) has a U e of 78.7 J cm −3 at room temperature and can work stably between −150 and 200 °C, and the U e still exceeds 40 J cm −3 at 200 °C. [22] But polymer-based ferroelectric materials often cannot be applied at high temperatures and have a low energy storage density (<40 J cm −3 ). [23,24] The high temperature special design can meet the temperature requirements, but the dielectric properties need more optimization. [25,26] The spontaneous polarization of BaTiO 3 (BTO) is about 25 µC cm −2 , [27] and the spontaneous polarization of stress-modulated BTO Perovskite oxide thin film materials are used in various fields of human life due to their excellent physical properties. The high performance thin films in turn prov...

show abstract

Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Cited by 9 publications

References 28 publications

Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering

Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

Perovskite Oxide Ferroelectric Thin Films

Contact Info

Product

Resources

About