2009
DOI: 10.1080/00986440903155428
|View full text |Cite
|
Sign up to set email alerts
|

SELECTIVE REMOVAL OF HIGH-KGATE DIELECTRICS

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
17
0

Year Published

2010
2010
2025
2025

Publication Types

Select...
4
1
1

Relationship

0
6

Authors

Journals

citations
Cited by 38 publications
(17 citation statements)
references
References 101 publications
0
17
0
Order By: Relevance
“…The proportional relationship was explained by the fact that those oxides generate highly volatile byproducts after the chemical reaction with fluorine plasma, and that result was also supported by Thienot et al [25]. Therefore, it is a very interesting result that SAY glass showed the lowest plasma etching depth among the glasses because Y generates the most volatile byproduct after the chemical reaction with fluorine plasma among the rare-earth elements in the glasses (Table 4) [21,22]. Physical and chemical etching occurs simultaneously during the plasma etching process [21,26,27].…”
Section: Discussionmentioning
confidence: 66%
See 3 more Smart Citations
“…The proportional relationship was explained by the fact that those oxides generate highly volatile byproducts after the chemical reaction with fluorine plasma, and that result was also supported by Thienot et al [25]. Therefore, it is a very interesting result that SAY glass showed the lowest plasma etching depth among the glasses because Y generates the most volatile byproduct after the chemical reaction with fluorine plasma among the rare-earth elements in the glasses (Table 4) [21,22]. Physical and chemical etching occurs simultaneously during the plasma etching process [21,26,27].…”
Section: Discussionmentioning
confidence: 66%
“…It seems that the plasma etching test under various biases should be conducted to sufficiently understand the plasma etching behavior of the glass in the future. The degree of fluorination of each element in the glasses after the fluorine plasma exposure [21,22]. …”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…From the experimental result, the poly-Si nanowires with HfO 2 sensing film reveals the highest number of assay tests. This is due to the polycrystalline structure of HfO 2 film which is difficult to remove by the wet etch process (11). Contrastively, the TEOS SiO 2 sample shows the poor reproducibility tests, indicative of the amorphous structure that can be seriously harmed by ions in electrolyte.…”
Section: Resultsmentioning
confidence: 98%