Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160°C

Yamada, Akira; Oshima, Takayuki; Konagai, Makoto; Takahashi, Kiyoshi

doi:10.1007/bf02655470

Cited by 8 publications

(2 citation statements)

References 13 publications

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“…This strategy demands Si epitaxy with large critical thickness, high growth rate, and low temperature. So far, a variety of epitaxy techniques such as chemical vapor epitaxy (CVE), 11,12) molecular beam epitaxy (MBE), 13,14) and sputter epitaxy (SE) [15][16][17][18][19][20][21] have been developed. Among these techniques, SE takes advantage of surface bombardment by low-kineticenergy particles, which enables epitaxy with large critical thickness at a high growth rate and a low temperature.…”

Section: Introductionmentioning

confidence: 99%

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Yeh¹,

Tatebe²

2015

Jpn. J. Appl. Phys.

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An intrinsic sputter-epitaxial (SE) Si film with a thickness of 1000 nm and a 50-nm-thick n+ SE-Si film were successfully grown as the light-absorbing layer and emitter layer, respectively, on a heavily doped p-Si(100) wafer to form the p–i–n junction of a solar cell (SC). Heavily doped n+ SE-Si with an electron concentration n of 3 × 1020 cm−3 was grown by cosputtering of Sb with Si. The characteristics of SE-Si grown at 310 °C was investigated in relation to annealing temperature. The oxygen concentration in SE-Si was ∼1018 cm−3, which was found to originate from the gas released in the chamber. Oxygen-induced thermal donors then became the source of n in the film, and n was reduced to 1 × 1016 cm−3 after forming-gas annealing at 700 °C because the thermal donors were neutralized by hydrogen. The SC exhibited a maximum internal quantum efficiency of 73.7%.

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Section: Introductionmentioning

confidence: 99%

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Yeh¹,

Tatebe²

2015

Jpn. J. Appl. Phys.

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“…This necessitates the fabrication of epitaxial Si layers with high critical epitaxial thickness at high growth rate and low processing temperature for solar cells. So far, a variety of deposition techniques such as chemical vapor deposition (CVD), [1][2][3][4][5][6] molecular beam epitaxy (MBE), 7,8) and sputter epitaxy (SE) [9][10][11][12][13][14] have been adopted for the epitaxial growth of Si thin films. Among these techniques, SE offers the advantages of reduced processing temperature (300 °C) resulting from the surface bombardment of low-kineticenergy particles and an ultra-clean processing environment.…”

Section: Introductionmentioning

confidence: 99%

Direct-current sputter epitaxy of Si and its application to fabricate n⁺-emitters for crystalline-Si solar cells

Yeh

Tatebe

Sugihara

et al. 2014

Jpn. J. Appl. Phys.

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Direct-current sputter epitaxy of Si on a Si(001) substrate was realized at 175 °C at a growth rate of 3.3 nm·s−1 and was applied to form n+-emitters of crystalline-Si solar cells. A solar cell with a 50-nm-thick n+-emitter exhibited a short current density of 23.8 mA·cm−2 owing to an increased internal quantum efficiency at wavelengths between 400 and 600 nm. The improved efficiency was due to the step junction characteristics of the epitaxially grown n+-emitter exhibiting a better response at short wavelengths, a performance better than that of the graded junction formed by thermal diffusion.

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High‐rate deposition of epitaxial layers for efficient low‐temperature thin film epitaxial silicon solar cells

Oberbeck

Schmidt

Wagner

et al. 2001

Progress in Photovoltaics

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Low–temperature deposition of Si for thin‐film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open‐circuit voltage of these solar cells. In contrast, ion‐assisted deposition produces Si films with a minority‐carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin‐film Si solar cell with a 20‐μm‐thick epitaxial layer achieves an open‐circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high‐temperature solar cell process steps. Copyright © 2001 John Wiley & Sons, Ltd.

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Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160°C

Cited by 8 publications

References 13 publications

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Direct-current sputter epitaxy of Si and its application to fabricate n⁺-emitters for crystalline-Si solar cells

High‐rate deposition of epitaxial layers for efficient low‐temperature thin film epitaxial silicon solar cells

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Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160°C

Cited by 8 publications

References 13 publications

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Direct-current sputter epitaxy of Si and its application to fabricate n+-emitters for crystalline-Si solar cells

High‐rate deposition of epitaxial layers for efficient low‐temperature thin film epitaxial silicon solar cells

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Direct-current sputter epitaxy of Si and its application to fabricate n⁺-emitters for crystalline-Si solar cells