Selective tungsten CVD on submicron contact hole

Yeh, Wen Kuan; Chen, Mao Chieh; Wang, Pei Jan; Liu, Lu Min; Lin, Mou Shiung

doi:10.1016/0040-6090(96)80078-2

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…Based on this, the technique of selective deposition has been extensively used in microelectronics. 63,[73][74][75][76] In spite of the technological importance of this phenomenon, its principle is not yet clearly understood. Selective deposition can be best understood by considering that charged clusters are the major deposition flux for growth of thin films.…”

Section: Deposition Behaviour Of Charged Clusters Selective Depositionmentioning

confidence: 99%

Charged clusters in thin film growth

Hwang¹,

Kim²

2004

International Materials Reviews

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A cauliflower structure is a granular film composed of spherical particles similar in size, each with numerous nanoscale nodules on its surface. The structure is produced during certain chemical vapour deposition (CVD) processes for diamond and silicon thin film growth. A classical account in terms of atomic unit deposition fails to explain the growth of such a cauliflower structure, as it requires a gas phase of much higher supersaturation than for onset of diffusion controlled growth. Another interesting and somewhat puzzling phenomenon encountered during a diamond CVD process is that while diamond is depositing on a graphite substrate, carbon atoms in the graphite itself are etched away into the vapour phase; that is, experience evaporation. Again, an elementary kinetic barrier mechanism fails to explain such CVD deposition of a less stable diamond phase combined with simultaneous evaporation of a stable graphite phase. In order to account for such puzzling CVD phenomena and others, a theory of charged clusters has been developed over the past decade as a new paradigm for thin film growth. The theory and its applications are reviewed in this work.

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Section: Deposition Behaviour Of Charged Clusters Selective Depositionmentioning

confidence: 99%

Charged clusters in thin film growth

Hwang¹,

Kim²

2004

International Materials Reviews

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“…Ultrathin metallic or metal-oxide layers deposited onto oxide surfaces have wide applications in microelectronics, catalysis, photonics, and chemical sensing. − Continuing size reduction of devices and development of three-dimensional architectures for microelectronic circuits stimulate elaborate efforts toward effective film growth methods that can produce high aspect ratio structures. , Recent application trends in heterogeneous catalysis based on dispersion of catalysts over an artificial structure, such as anodized aluminum membrane , or three-dimensional photonic crystal with highly porous structure, also promote development of conformal film deposition methods.…”

Section: Introductionmentioning

confidence: 99%

Imaging of Atomic Layer Deposited (ALD) Tungsten Monolayers on α-TiO₂(110) by X-ray Standing Wave Fourier Inversion

et al. 2006

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A single atomic layer of tungsten grown by atomic layer deposition (ALD) on a single-crystal rutile TiO2(110) support is studied by the X-ray standing wave (XSW) technique. The surface structural and chemical properties were also examined using atomic force microscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. The XSW measured set of hkl Fourier components for the W atomic distribution function are summed together to produce a model-independent 3D map of the W atoms relative to the rutile lattice. The 3D atomic image shows surface tungsten atoms equally occupying the two nonequivalent Ti sites with a slight outward displacement. This corresponds to the atop and bridge sites with respect to the underlying lattice oxygen atoms. These XSW measurements clearly show that ALD conformal layers can be highly coherent with respect to the substrate lattice.

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