Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

Tong, Yi; Liu, Bin; Lim, Poon Nian; Yeo, Yee-Chia

doi:10.1109/led.2012.2191760

Cited by 38 publications

(15 citation statements)

References 18 publications

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“…144,307,[378][379][380][381][382][383][384][385][386][387][388][389][390] However, the net effect of interfacial chalcogen varied, as both significant increases 307 and decreases 386 in the n-type SBH were observed. To introduce impurities such as metals, [391][392][393][394][395] dopants, 348,389,390,[396][397][398][399][400][401][402][403][404] semiconducting, 405,406 and insulating 407 elements to the MS interface, various other methods have also been used, including deposition, ion implantation, segregation, etc. As shown in Fig.…”

Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,072

479

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The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

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Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,072

479

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“…Consequently, the donor-type trap levels due to Sb segregation at the Ni silicide/n-Si interface generate positive charges on the Si side of the interface. These positive charges then induce negative charges of equal magnitude (interfacial dipoles) on the Ni silicide side of the interface, generating an electric field [13,14,16,17]. This electric field leads to the sharp band bending of Si, which reduces the electron barrier width.…”

Section: Resultsmentioning

confidence: 99%

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

Lee¹,

Li²,

Oh³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the effective electron Schottky barrier height (Ф Bn ) of the Ni silicide/nsilicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective Ф Bn is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective Ф Bn of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.Index Terms-Nckel silicide, antimony interlayer, Schottky diode, effective Schottky barrier height, nchannel MOSFETs

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“…This mechanism may also be possible for Ge and other chalcogens (i.e., Se and Te) if the solid solubility limit of chalcogens in Ge is larger near the NiGe/Ge interface than in bulk Ge. If chalcogens are present in Ge around the interface, the currents through the chalcogen donor levels may be dominant, which act as assist levels for electrons, 7,9,10 for example, by trap-assisted tunneling (TAT) 20 or the Poole-Frenkel effect (field-assisted thermal ionization). 21 These models, together with our previously reported model for S-NiGe/Ge, 7 suggest the following mechanism for SBH modification in chalcogen-NiGe/Ge.…”

Section: à3mentioning

confidence: 99%

“…9,10 However, no reports have investigated whether the chalcogen Te has an effect similar to that of S and Se on the SBH. Thus, more data are needed for comparing the effects of these chalcogens on the electrical characteristics of NiGe/Ge junctions.…”

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confidence: 99%

Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

Koike

Kamimuta

Tezuka

et al. 2016

Applied Physics Letters

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The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH.

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Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

Cited by 38 publications

References 18 publications

The physics and chemistry of the Schottky barrier height

The physics and chemistry of the Schottky barrier height

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

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